1N4948G
更新时间：2024-09-18 12:44:14
品牌：MDD
描述：Reverse Voltage - 200 to 1000 Volts Forward Current -1.0 Ampere
概述
数据手册1N4948G 概述
Reverse Voltage - 200 to 1000 Volts Forward Current -1.0 Ampere 反向电压 - 200〜 1000伏正向电流-1.0安培
1N4948G 数据手册
通过下载1N4948G数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载1N4942G THRU 1N4948G
FAST RECOVERY GLASS PASSIVATED RECTIFIERS
Reverse Voltage - 200 to 1000 Volts Forward Current -
1.0 Ampere
FEATURES
DO-41
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
1.0 (25.4)
MIN.
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
0.107(2.7)
0.080(2.0)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.205(5.2)
0.166(4.2)
MECHANICAL DATA
1.0 (25.4)
MIN.
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
0.034(0.86)
0.028(0.70)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight:0.012 ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N
4942G
1N
4944G
1N
4946G
1N
4947G
1N
4948G
SYMBOLS
UNITS
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
VOLTS
VOLTS
VOLTS
VRRM
VRMS
VDC
1000
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=75 C
Peak forward surge current
I(AV)
1.0
Amp
IFSM
VF
30.0
1.3
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=100 C
(NOTE 1)
5.0
50.0
µ
A
IR
trr
ns
150
250
500
Typical junction capacitance (NOTE 2)
CJ
RθJA
pF
C/W
C
15.0
50.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
TJ,TSTG
-65 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES 1N4942G THRU 1N4948G
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
8.3ms SINGLE HALF SINE-WAVE
10
(JEDEC Method)
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
1
0.1
TJ=100 C
1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
0.1
0.01
0.01
TJ=25 C
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
1N4948G 相关器件
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| 1N4948G-B | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 | 获取价格 |
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| 1N4948GH02 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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| 1N4948GH02-1 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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| 1N4948GH02-3 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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| 1N4948GH02-5 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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| 1N4948GH03 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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| 1N4948GH03-1 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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| 1N4948GH03-3 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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| 1N4948GH03-4 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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| 1N4948GH04 | RECTRON | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41 | 获取价格 |
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