1N4948G-B [RECTRON]
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2;
| 型号： | 1N4948G-B |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4942G
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4948G
FAST RECOVERY GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 200 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* High reliability
* Low leakage
* Low forward voltage drop
* Glass passivated junction
* High switch capability
DO-41
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
.034 (0.9)
.028 (0.7)
DIA.
1.0 (25.4)
MIN.
* Weight: 0.35 gram
.205 (5.2)
.166 (4.2)
.107 (2.7)
.080 (2.0)
DIA.
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
1N4942G
1N4944G
1N4946G
1N4947G
1N4948G
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
RRM
RMS
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
V
DC
O
1000
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
I
1.0
30
Amps
Amps
at TA
= 55oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Typical Junction Capacitance (Note 2)
C
J
15
pF
0 C
Operating and Storage Temperature Range
T
J
, TSTG
-55 to + 150
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
SYMBOL
1N4942G
1N4944G
1N4946G
1.3
1N4947G
1N4948G
UNITS
Volts
V
F
5.0
uAmps
at Rated DC Blocking Voltage T
Maximum Full Load Reverse Current Full Cycle
Average, .375” (9.5mm) lead length at T
= 55oC
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I = 0.5A, I = -1.0A, IRR = -0.25A
2. Measured at 1 MH and applied reverse voltage of 4.0 volts
A
= 25oC
I
R
100
uAmps
nSec
L
trr
150
250
500
F
R
2002-11
Z
(
)
RATING AND CHARACTERISTIC CURVES 1N4942G THRU 1N4948G
FIG. 2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 1 - TYPICAL FORWARD
CURRENT DERATING CURVE
10
1.0
.1
1.50
1.25
1.00
.75
.50
.25
0
T
= 25
J
Pulse Width = 300us
1% Duty Cycle
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.01
.4
.6
.8
1.0 1.2 1.4 1.6
25
50
75
100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, (V)
AMBIENT TEMPERATURE, (
)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
50
40
20
10
T
= 125
J
1.0
.1
30
20
T
= 75
J
10
0
8.3ms Single Half Sine-Wave
(JEDED Method)
T
= 25
J
.01
6
1
2
4
8 10
20
40 6080100
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
NUMBER OF CYCLES AT 60Hz
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
200
100
60
50
10
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
( - )
0
D.U.T
40
( + )
PULSE
GENERATOR
(NOTE 2)
-0.25A
25 Vdc
(approx)
( - )
20
1
OSCILLOSCOPE
(NOTE 1)
( + )
10
6
NON-
INDUCTIVE
T
= 25
J
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
4
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
2
1
.1 .2 .4
1.0
2
4
10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON
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