CEP02N6A [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | CEP02N6A |
厂家: | CHINO-EXCEL TECHNOLOGY |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:125K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
650V
650V
650V
650V
RDS(ON)
7.5Ω
ID
@VGS
10V
CEP02N6A
CEB02N6A
CEI02N6A
CEF02N6A
1.5A
1.5A
1.5A
1.5A e
7.5Ω
10V
7.5Ω
10V
7.5Ω
10V
D
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
S
CEB SERIES
TO-263(DD-PAK)
CEI SERIES
TO-262(I2-PAK)
CEP SERIES
TO-220
CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Limit
Parameter
Symbol
Units
TO-220/263/262 TO-220F
650
Drain-Source Voltage
VDS
VGS
ID
V
V
Gate-Source Voltage
±30
1.5
4.5
42
1.5 e
4.5 e
28
Drain Current-Continuous
Drain Current-Pulsed a
A
f
IDM
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
W
W/ C
mJ
A
PD
0.33
90
0.22
90
EAS
IAS
1.4
1.4
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
3
4.5
65
RθJA
62.5
2003.December
http://www.cetsemi.com
4 - 6
CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.8A
2
4
V
Ω
S
5.8
0.8
7.5
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 50V, ID = 0.8A
Ciss
Coss
Crss
176
48
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
21
td(on)
tr
td(off)
tf
11
16
28
16
15
2.4
8.7
27
40
35
40
21
ns
ns
VDD = 300V, ID = 1A,
VGS = 10V, RGEN = 18Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 480V, ID = 1A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
g
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
1.5
1.5
A
V
VSD
VGS = 0V, IS = 0.8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =60mH, I =1.4A, V = 50V, R = 25Ω, Starting T = 25 C .
AS
DD
G
J
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package I
= 1.2A .
S(max)
4 - 7
CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
1.8
1.5
1.2
0.9
0.6
0.3
0.0
VGS=10,9,8,7V
V
GS=6V
TJ=150 C
100
V
GS=5V
GS=4V
-55 C
1.VDS=40V
2.Pulse Test
25 C
V
10-1
0
2
4
6
8
10
12
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
250
200
150
100
50
ID=0.8A
VGS=10V
C
iss
C
oss
C
rss
0
-100
-50
0
50
100
150
200
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
100
10-1
10-2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 8
CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
101
15
12
9
VDS=480V
ID=1A
4
100ms
1ms
10ms
DC
RDS(ON)Limit
100
6
10-1
3
TC=25 C
TJ=150 C
Single Pulse
10-2
0
100
101
102
103
0
5
10
15
20
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
10-1
0.1
PDM
0.05
t1
t2
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC= P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4 - 9
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