CEP02N7 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CEP02N7 |
| 厂家： | 
CHINO-EXCEL TECHNOLOGY |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEP02N7/CEB02N7
CEI02N7/CEF02N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
700V
700V
700V
700V
RDS(ON)
6.6Ω
ID
@VGS
10V
CEP02N7
CEB02N7
CEI02N7
CEF02N7
1.9A
1.9A
1.9A
1.9A e
6.6Ω
10V
6.6Ω
10V
6.6Ω
10V
D
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
S
CEB SERIES
TO-263(DD-PAK)
CEI SERIES
TO-262(I2-PAK)
CEF SERIES
TO-220F
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Limit
Parameter
Symbol
Units
TO-220/263/262 TO-220F
700
Drain-Source Voltage
VDS
VGS
ID
V
V
Gate-Source Voltage
±30
1.9
6
1.9 e
6 e
Drain Current-Continuous
Drain Current-Pulsed a
A
f
IDM
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Operating and Store Temperature Range
60
32
W
PD
0.48
125
2
0.26
125
2
W/ C
mJ
A
EAS
IAR
EAR
5.4
5.4
mJ
C
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.1
3.9
65
RθJA
62.5
2004.October
http://www.cetsemi.com
4 - 10
CEP02N7/CEB02N7
CEI02N7/CEF02N7
Electrical Characteristics T = 25 C unless otherwise noted
c
4
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
700
V
25
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 1A
2
4
V
Ω
S
5.5
0.7
6.6
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
VDS = 50V, ID = 1A
Ciss
Coss
Crss
250
50
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Turn-On Delay Time
30
td(on)
tr
td(off)
tf
19
26
34
15
14
2.5
8.6
35
50
70
40
20
ns
ns
VDD = 300V, ID = 2A,
VGS = 10V, RGEN = 18Ω
Turn-On Rise Time
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
VDS = 480V, ID = 2A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
g
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
1.9
1.5
A
V
h
VSD
VGS = 0V, IS = 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =60mH, I =2.0A, V = 50V, R = 25Ω, Starting T = 25 C .
AS
DD
G
J
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package I
= 1.4A .
S(max)
h.Full package V test condition I = 1.5A , V = 1.6V .
SD
S
SD(Max)
4 - 11
CEP02N7/CEB02N7
CEI02N7/CEF02N7
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ=150 C
100
-55 C
1.VDS=40V
2.Pulse Test
25 C
10-1
0
5
10
15
20
25
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
250
200
150
100
50
ID=1A
VGS=10V
C
iss
C
oss
C
rss
0
-100
-50
0
50
100
150
200
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4 - 12
CEP02N7/CEB02N7
CEI02N7/CEF02N7
101
15
12
9
VDS=480V
ID=2A
10ms
4
RDS(ON)Limit
1ms
100
10ms
DC
6
10-1
3
TC=25 C
TJ=150 C
Single Pulse
10-2
0
100
101
102
103
0
5
10
15
20
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
0.1
10-1
PDM
0.05
t1
t2
0.02
0.01
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4 - 13
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