CZT32C [CENTRAL]
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR; 2.0W互补硅功率晶体管
| 型号： | CZT32C |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 2.0W COMPLEMENTARY SILICON POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
NEW
CZT31C NPN
CZT32C PNP
S e m ic o n d u c t o r Co r p .
2.0W COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT31C
and CZT32C types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designedforsurfacemountedpoweramplifier
applications up to 3.0 amps.
POWER TM
223
SOT-223 CASE
o
MAXIMUM RATINGS: (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
I
100
100
5.0
3.0
6.0
1.0
2.0
V
V
CBO
CEO
EBO
V
A
C
Peak Collector Current
Base Current
I
A
CM
I
A
B
Power Dissipation
P
W
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
J stg
-65 to +150
62.5
C
o
Θ
C/W
JA
o
ELECTRICAL CHARACTERISTICS: (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
200
300
1.0
UNITS
µA
µA
mA
V
I
V
V
V
=100V
=60V
CES
CE
CE
EB
I
CEO
I
=5.0V
EBO
BV
I =30mA
100
CEO
C
* V
I =3.0A, I =375mA
1.2
1.8
V
CE(SAT)
C
B
* V
* h
V
=4.0V, I =3.0A
V
BE(ON)
CE
CE
CE
CE
C
V
V
V
=4.0V, I =1.0A
C
25
10
FE
FE
* h
=4.0V, I =3.0A
100
C
f
=10V, I =500mA, f=1.0MHz
C
3.0
MHz
T
* Pulsed, 2%D.C.
294
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
R1
295
相关型号：
CZT32CTR
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL
CZT32CTR13LEADFREE
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL
CZT3904BKLEADFREE
Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL
CZT3904TR13LEADFREE
Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL
CZT3906BK
Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL
CZT3906BKLEADFREE
Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin,
CENTRAL
©2020 ICPDF网 联系我们和版权申明