CZT3906 [CENTRAL]
COMPLEMENTARY SILICON TRANSISTORS; 互补硅晶体管
| 型号： | CZT3906 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | COMPLEMENTARY SILICON TRANSISTORS |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CZT3904 NPN
CZT3906 PNP
Ce n t r a l
S e m ic o n d u c t o r Co r p .
COMPLEMENTARY
DESCRIPTION:
SILICON TRANSISTORS
The CENTRAL SEMICONDUCTOR
CZT3904,CZT3906typesarecomplementary
silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for small
signal general purpose and switching
applications.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
CZT3904
CZT3906
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
60
40
6.0
40
40
5.0
V
V
V
mA
W
CBO
CEO
EBO
I
P
200
2.0
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
-65 to +150
62.5
C
C/W
J stg
o
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
CZT3904
CZT3906
SYMBOL
TEST CONDITIONS
=30V, V =3.0V
MIN MAX
MIN MAX
UNITS
nA
V
I
V
50
50
CEV
CE
EB
BV
BV
BV
V
V
V
V
h
h
h
h
h
I =10µA
60
40
6.0
40
40
5.0
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
I =1.0mA
V
V
V
V
V
V
C
I =10µA
E
I =10mA, I =1.0mA
0.20
0.30
0.25
0.40
C
C
B
B
B
B
I =50mA, I =5.0mA
I =10mA, I =1.0mA
0.65
0.85
0.95
0.65
0.85
0.95
C
I =50mA, I =5.0mA
C
V
=1.0V, I =0.1mA
40
70
60
80
CE
CE
CE
CE
CE
C
V
V
V
V
=1.0V, I =1.0mA
C
FE
FE
FE
=1.0V, I =10mA
100
60
300
100
60
300
C
=1.0V, I =50mA
C
=1.0V, I =100mA
30
30
FE
C
308
CZT3904
MIN MAX
300
CZT3906
MIN MAX
250
SYMBOL
TEST CONDITIONS
UNITS
MHz
pF
f
C
C
h
h
h
h
NF
V
V
V
V
V
V
V
V
=20V, I =10mA, f=100MHz
T
ob
ib
ie
re
fe
oe
CE
CB
BE
CE
CE
CE
CE
CE
C
=5.0V, I =0, f=1.0MHz
E
4.0
8.0
4.5
10
=0.5V, I =0, f=1.0MHz
pF
kΩ
C
=10V, I =1.0mA, f=1.0kHz
C
1.0
0.5
100
1.0
10
8.0
400
40
2.0
0.1
12
10
-4
=10V, I =1.0mA, f=1.0kHz
x10
C
=10V, I =1.0mA, f=1.0kHz
C
100 400
=10V, I =1.0mA, f=1.0kHz
3.0
60
µmhos
C
=5.0V, I =100µA, R =1.0kΩ
C
S
f=10Hz to 15.7kHz
5.0
35
35
4.0
35
35
225
75
dB
ns
ns
ns
ns
t
t
t
t
V
V
V
V
=3.0V, V =0.5, I =10mA, I =1.0mA
BE B1
=3.0V, V =0.5, I =10mA, I =1.0mA
d
r
s
f
CC
CC
CC
CC
C
C
BE B1
=3.0V, I =10mA, I =I =1.0mA
200
50
C
B1 B2
B1 B2
=3.0V, I =10mA, I =I =1.0mA
C
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
R2
309
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