CP630-TIP127 [CENTRAL]
Power Bipolar Transistor,;![CP630-TIP127](http://pdffile.icpdf.com/pdf2/p00247/img/icpdf/CP630-TIP127_1501358_icpdf.jpg)
型号: | CP630-TIP127 |
厂家: | ![]() |
描述: | Power Bipolar Transistor, 开关 晶体管 |
文件: | 总4页 (文件大小:592K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CP630-TIP127
PNP - Darlington Transistor Die
5.0 Amp, 100 Volt
www.centralsemi.com
The CP630-TIP127 die is a silicon PNP Darlington power transistor designed for low speed
switching and amplifier applications.
MECHANICAL SPECIFICATIONS:
Die Size
80 x 80 MILS
8.0 MILS
Die Thickness
E
Base Bonding Pad Size
Emitter Bonding Pad Size
Top Side Metalization
Back Side Metalization
Scribe Alley Width
Wafer Diameter
18 x 27 MILS
34 x 34 MILS
Al - 30,000Å
Ti/Pd/Ag - 20,000Å
2.4 MILS
B
4 INCHES
Gross Die Per Wafer
1,445
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
A
V
V
V
100
100
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
5.0
Continuous Collector Current
Peak Collector Current
I
5.0
A
C
I
8.0
A
CM
Continuous Base Current
Operating and Storage Junction Temperature
I
120
mA
°C
B
T , T
-65 to +150
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=100V
200
μA
CBO
CEO
EBO
CB
CE
EB
=50V
500
2.0
ꢀA
mA
V
=5.0V
BV
I =100mA
100
CEO
CE(SAT)
CE(SAT)
BE(ON)
FE
C
V
V
V
I =3.0A, I =12mA
2.0
4.0
2.5
V
C
B
I =5.0A, I =20mA
V
C
B
V
=3.0V, I =3.0A
V
CE
CE
CE
CE
CB
C
h
h
V
V
V
V
=3.0V, I =500mA
1.0K
1.0K
4.0
C
=3.0V, I =3.0A
FE
C
f
=4.0V, I =3.0A, f=1.0MHz
MHz
pF
T
C
C
=10V, I =0, f=100kHz
300
ob
E
R0 (28-July 2016)
CP630-TIP127
Typical Electrical Characteristics
www.centralsemi.com
R0 (28-July 2016)
BARE DIE PACKING OPTIONS
BARE DIE IN TRAY (WAFFLE) PACK
CT: Singulated die in tray (waffle) pack.
(example: CP211-PART NUMBER-CT)
CM: Singulated die in tray (waffle) pack 100% visually inspected as
per MIL-STD-750, (method 2072 transistors, method 2073 diodes).
(example: CP211-PART NUMBER-CM)
UNSAWN WAFER
WN: Full wafer, unsawn, 100% tested with reject die inked.
(example: CP211-PART NUMBER-WN)
SAWN WAFER ON PLASTIC RING
WR: Full wafer, sawn and mounted on plastic ring,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WR)
SAWN WAFER ON METAL FRAME
WS: Full wafer, sawn and mounted on metal frame,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WS)
R0 (7-December 2015)
www.centralsemi.com
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Inventory bonding
• Custom bar coding for shipments
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
• Online technical data and parametric search
• SPICE models
• Special wafer diffusions
• PbSn plating options
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Customer specific screening
• Up-screening capabilities
• Application and design sample kits
• Custom product and package development
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
Worldwide Field Representatives:
www.centralsemi.com/wwreps
Worldwide Distributors:
www.centralsemi.com/wwdistributors
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
(000)
www.centralsemi.com
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