CP645 [CENTRAL]

Power Transistor PNP, 8.0A Power Transistor Chip; 功率晶体管PNP ， 8.0A功率三极管芯片

CP645


型号：	CP645
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	Power Transistor PNP, 8.0A Power Transistor Chip 功率晶体管PNP ， 8.0A功率三极管芯片晶体晶体管
文件：	总1页 (文件大小：33K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TM

PROCESS CP645

Power Transistor

PNP, 8.0A Power Transistor Chip

Central

Semiconductor Corp.

PROCESS DETAILS

Process

Die Size

MULTIEPITAXIAL MESA

120 x 145 MILS

13 MILS

Die Thickness

Base Bonding Pad Area

Emitter Bonding Pad Area

Top Side Metalization

Back Side Metalization

20 x 45 MILS

14 x 70 MILS

Al - 50,000Å

Cr / Ni / Ag - 10,000Å

GEOMETRY

GROSS DIE PER 4 INCH WAFER

640

PRINCIPAL DEVICE TYPES

MJE15031

145 Adams Avenue

Hauppauge, NY 11788 USA

Tel: (631) 435-1110

Fax: (631) 435-1824

www.centralsemi.com

R0 (4- April 2005)

相关型号：

CP647-MJ11015

Power Bipolar Transistor,

CENTRAL

CP650

POWERFET⑩ SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS

TELEDYNE

CP651

POWERFET⑩ SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS

TELEDYNE

CP652

POWERFET⑩ SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS

TELEDYNE

CP653

POWERFET⑩ SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS

TELEDYNE

CP660-7R

120...195 Watt DC-DC Converters

POWER-ONE

CP665

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-5, TO-5, 3 PIN

MICROSEMI

CP666

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-5, TO-5, 3 PIN

MICROSEMI

CP667

Small Signal Transistor PNP- Saturated Switch Transistor Chip

CENTRAL

CP681-CMPTH81-WR

Transistor

CENTRAL

CP681-CMPTH81-WS

Transistor

CENTRAL

CP68475H-2

PELTIER MODULE

CUI

©2020 ICPDF网联系我们和版权申明