CMXD4448_10 [CENTRAL]
SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES; 表贴三合一独立的高速硅开关二极管![CMXD4448_10](http://pdffile.icpdf.com/pdf1/p00172/img/icpdf/CMXD4_962175_icpdf.jpg)
型号: | CMXD4448_10 |
厂家: | ![]() |
描述: | SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES |
文件: | 总2页 (文件大小:551K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CMXD4448
SURFACE MOUNT
TRIPLE ISOLATED
HIGH SPEED
SILICON SWITCHING DIODES
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMXD4448
type contains three (3) Isolated High Speed Silicon
Switching Diodes, manufactured by the epitaxial planar
process, epoxy molded in a SUPERmini™ surface
mount package, and designed for applications requiring
high speed switching.
MARKING CODE: X48
SOT-26 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
V
75
100
R
V
V
RRM
I
250
mA
mA
A
F
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
I
500
FRM
I
4.0
FSM
FSM
I
1.0
A
P
350
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =20V
MIN
MAX
UNITS
nA
V
I
25
R
R
BV
I =5.0μA
75
R
R
R
BV
I =100μA
100
V
R
V
I =100mA
1.0
4.0
4.0
V
F
F
C
V =0, f=1.0MHz
pF
ns
T
R
t
I =I =10mA, I =1.0mA, R =100Ω
rr
R
F
rr
L
R5 (12-February 2010)
CMXD4448
SURFACE MOUNT
TRIPLE ISOLATED
HIGH SPEED
SILICON SWITCHING DIODES
SOT-26 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
MARKING CODE: X48
R5 (12-February 2010)
www.centralsemi.com
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