CMXDM7002A [CENTRAL]

DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET; 双N沟道增强型表面贴装MOSFET
CMXDM7002A
型号: CMXDM7002A
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

DUAL N-CHANNEL ENHANCEMENT-MODE SURFACE MOUNT MOSFET
双N沟道增强型表面贴装MOSFET

文件: 总2页 (文件大小:90K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TM  
CMXDM7002A  
Central  
Semiconductor Corp.  
DUAL  
N-CHANNEL  
ENHANCEMENT-MODE  
SURFACE MOUNT MOSFET  
DESCRIPTION:  
The  
CENTRAL  
SEMICONDUCTOR  
CMXDM7002A is special dual version of the  
2N7002 Enhancement-mode N-Channel Field  
Effect Transistor, manufactured by the N-Channel  
DMOS Process, designed for high speed pulsed  
amplifier and driver applications. This special  
Dual Transistor device offers low r  
DS (ON).  
Marking Code is X02A  
and  
DS(ON)  
low V  
SOT-26 CASE  
MAXIMUM RATINGS (T =25°C)  
A
SYMBOL  
UNITS  
Drain-Source Voltage  
V
60  
60  
V
V
DS  
DG  
GS  
Drain-Gate Voltage  
V
V
Gate-Source Voltage  
40  
V
Continuous Drain Current  
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current  
Maximum Pulsed Source Current  
Power Dissipation  
I
280  
280  
1.5  
1.5  
350  
mA  
mA  
A
D
I
S
I
DM  
I
A
SM  
P
mW  
D
Operating and Storage  
Junction Temperature  
T ,T  
J stg  
-65 to +150  
357  
°C  
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
1.0  
UNITS  
nA  
nA  
µA  
µA  
mA  
V
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0V  
DS  
GSSF  
GSSR  
DSS  
GS  
GS  
DS  
DS  
GS  
GS  
=20V, V =0V  
DS  
=60V, V =0V  
GS  
=60V, V =0V, T =125°C  
500  
DSS  
GS  
DS  
j
=10V, V  
2V  
500  
60  
D(ON)  
DS(ON)  
BV  
GS(th)  
=0V, I =10µA  
DSS  
D
V
V
V
=V , I =250µA  
1.0  
2.5  
1.0  
0.15  
2.0  
3.5  
3.0  
5.0  
V
DS GS D  
=10V, I =500mA  
V
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DD  
D
=5.0V, I =50mA  
V
D
r
r
r
r
=10V, I =500mA  
D
=10V, I =500mA, T =125°C  
D
j
=5.0V, I =50mA  
D
=5.0V, I =50mA, T =125°C  
D
j
g
2V  
, I =200mA  
DS(ON) D  
80  
mmhos  
pF  
pF  
pF  
ns  
FS  
C
C
C
=25V, V =0, f=1.0MHz  
5.0  
50  
25  
20  
20  
1.2  
rss  
iss  
GS  
=25V, V =0, f=1.0MHz  
GS  
=25V, V =0, f=1.0MHz  
oss  
GS  
t
t
=30V, V =10V, I =200mA,  
GS  
on  
D
R =25, R =150Ω  
ns  
off  
G
L
V
V
=0V, I =400mA  
V
SD  
GS  
S
R0 ( 05-December 2001)  
TM  
CMXDM7002A  
Central  
DUAL  
Semiconductor Corp.  
N-CHANNEL  
ENHANCEMENT-MODE  
SURFACE MOUNT MOSFET  
SOT-26 CASE - MECHANICAL OUTLINE  
Marking Code: X02A  
LEAD CODE:  
1) Gate Q1  
2) Source Q1  
3) Drain Q2  
4) Gate Q2  
5) Source Q2  
6) Drain Q1  
R0 ( 05-December 2001)  

相关型号:

CMXDM7002ABK

Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERMINI PACKAGE-6
CENTRAL

CMXDM7002ABKPBFREE

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CENTRAL

CMXDM7002A_10

SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS
CENTRAL

CMXE100D10

PCB Mount
CRYDOM

CMXE100D6

PCB Mount
CRYDOM

CMXE200D3

PCB Mount
CRYDOM

CMXE60D10

PCB Mount
CRYDOM

CMXE60D20

PCB Mount
CRYDOM

CMXE60D5

PCB Mount
CRYDOM

CMXESD70-4

Low Capacitance, ESD Protection4- Line Diode Array in SOT-26 package
CENTRAL

CMXSH-3

SUPER-MINI TRIPLE ISOLATED SURFACE MOUNT SCHOTTKY SWITCHING DIODE
CENTRAL

CMXSH-3BK

Rectifier Diode, Schottky, 3 Element, 0.1A, 30V V(RRM), Silicon, PLASTIC, SUPERMINI-6
CENTRAL