CMWSH-4_02 [CENTRAL]
SURFACE MOUNT SUPERminiTM DUAL ISOLATED SILICON SCHOTTKY DIODES; 表面安装SUPERminiTM双隔离硅肖特基二极管
| 型号： | CMWSH-4_02 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT SUPERminiTM DUAL ISOLATED SILICON SCHOTTKY DIODES |
| 文件： | 总2页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMWSH-4
Central
Semiconductor Corp.
SURFACE MOUNT
TM
SUPERmini
DUAL ISOLATED
DESCRIPTION:
SILICON SCHOTTKY DIODES
The CENTRAL SEMICONDUCTOR CMWSH-4,
40V, Low V , consists of two galvanically
F
TM
isolated SUPERmini Silicon Schottky diodes.
The CMWSH-4 has been designed for use in
high speed surface mount switching
applications.
MARKING CODE: WSH4
SOT-343 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=10 ms
Power Dissipation
V
40
V
RRM
F
FRM
FSM
D
I
I
I
100
350
750
350
mA
mA
mA
mW
P
Operating and Storage
Junction Temperature
T ,T
stg
-65 to +150
357
°C
°C/W
J
Thermal Resistance
Θ
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =25V
MIN
TYP
MAX
UNITS
I
I
I
90
500
nA
R
R
R
R
V =25V, T =100°C
25
100
5.0
0.33
0.45
0.60
µA
µA
V
V
V
R
R
A
V =40V
0.23
0.29
0.40
0.52
10.0
V
V
V
I =2.0mA
F
F
F
F
I =15mA
F
I =100mA
F
C
V =1.0V, f=1.0MHz
pF
ns
T
R
t
I =I =10mA, I =1.0mA, R =100Ω
rr
5.0
rr
F
R
L
R1 (14-November 2002)
TM
CMWSH-4
Central
Semiconductor Corp.
SURFACE MOUNT
TM
SUPERmini
DUAL ISOLATED
SILICON SCHOTTKY DIODES
SOT-343 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE D1
2) ANODE D1
3) ANODE D2
4) CATHODE D2
MARKING CODE: WSH4
R1 (14-November 2002)
相关型号：
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