CMUDM3590 [CENTRAL]
Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-3;
| 型号： | CMUDM3590 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-3 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：622K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMUDM3590 N-CH
CMUDM7590 P-CH
Central
Semiconductor Corp.
SURFACE MOUNT
DESCRIPTION:
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
The CENTRAL SEMICONDUCTOR CMUDM3590
and CMUDM7590 are complementary N-Channel
and P-Channel Enhancement-mode silicon MOSFETs
designed for high speed pulsed amplifier and driver
applications. These devices offer desirable MOSFET
electrical characteristics in an economical industry
standard SOT-523 package.
COMPLEMENTARY MOSFETS
MARKING CODES: CMUDM3590: C39
CMUDM7590: C79
SOT-523 CASE
• Devices are Halogen Free by design
FEATURES:
• ESD Protection up to 2kV
• Power Dissipation: 250mW
• Low Threshold Voltage
• Logic Level Compatibility
• Small SOT-523 Surface Mount Package
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
SYMBOL CMUDM3590
CMUDM7590
UNITS
V
V
mA
mA
mW
°C
A
V
V
I
I
20
8.0
DS
GS
D
D
160
200
140
180
Continuous Drain Current (t < 5s)
p
Power Dissipation
P
250
-65 to +150
500
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
stg
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C)
CMUDM3590
CMUDM7590
MIN TYP MAX
A
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
I
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V, V =0V
-
-
-
20
-
-
-
-
100
50
100
-
-
-
-
20
-
-
-
-
100
50
100
-
GSSF GSSR
DSS
DSS
GS
DS
DS
GS
DS
=5.0V, V =0V
GS
=16V, V =0V
GS
BV
V
=0V, I =250μA
DSS
GS(th)
D
=V , I =250μA
0.4
-
1.0
3.0
4.0
6.0
10
-
-
-
-
-
0.4
-
1.0
5.0
7.0
10
17
-
-
-
-
-
DS GS
D
D
D
D
D
D
D
r
r
r
r
r
=4.5V, I =100mA
-
-
-
-
-
-
-
-
-
-
-
1.5
2.0
3.0
4.0
7.0
1.3
2.2
9.0
3.0
40
150
-
-
-
-
-
-
-
-
-
-
-
4.0
5.5
8.0
11
20
1.3
1.0
12
2.7
60
210
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
DD
=2.5V, I =50mA
=1.8V, I =20mA
=1.5V, I =10mA
=1.2V, I =1.0mA
g
=5.0V, I =125mA
FS
rss
iss
C
C
C
=15V, V =0V, f=1.0MHz
GS
=15V, V =0V, f=1.0MHz
GS
=15V, V =0V, f=1.0MHz
oss
GS
GS
t
t
=10V, V =4.5V, I =200mA
=10V, V =4.5V, I =200mA
GS
-
-
-
-
on
off
D
D
R0 (21-May 2009)
TM
CMUDM3590 N-CH
CMUDM7590 P-CH
Central
Semiconductor Corp.
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
SOT-523 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
(BOTTOM VIEW)
(BOTTOM VIEW)
CMUDM7590
CMUDM3590
LEAD CODE:
1) GATE
2) SOURCE
3) DRAIN
LEAD CODE:
1) GATE
2) SOURCE
3) DRAIN
MARKING CODE: C39
MARKING CODE: C79
R0 (21-May 2009)
相关型号：
CMUDM7001TR
Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRAMINI-3
CENTRAL
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