CMUDM7001TRTIN/LEAD [CENTRAL]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | CMUDM7001TRTIN/LEAD |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总2页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMUDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUDM7001
is an N-Channel Enhancement-mode Silicon MOSFET,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers Low r
Low Theshold Voltage.
and
DS(ON)
MARKING CODE: C7A
FEATURES:
• Power Dissipation 250mW
SOT-523 CASE
• Low r
DS(ON)
APPLICATIONS:
• Low Threshold Voltage
• Load/Power Switches
• Logic Level Compatible
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
• Small, SOT-523 Surface Mount Package
• Complementary Device: CMUDM8001
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
20
10
DS
Gate-Source Voltage
V
V
GS
Continuous Drain Current (Steady State)
Continuous Drain Current
I
100
mA
mA
mW
°C
D
D
I
200
Power Dissipation
P
250
D
Operating and Storage Junction Temperature
T , T
-65 to +150
J
stg
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, V =0
1.0
μA
GSSF GSSR
GS
DS
GS
DS
I
=20V, V =0
GS
1.0
μA
V
DSS
BV
=0, I =100μA
20
DSS
GS(th)
D
V
=V , I =250μA
0.6
0.9
3.0
4.0
15
V
DS GS
D
r
r
r
=4.0V, I =10mA
0.9
1.3
Ω
DS(ON)
DS(ON)
DS(ON)
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DD
DD
D
=2.5V, I =10mA
Ω
D
=1.5V, I =1.0mA
Ω
D
Q
Q
Q
=10V, V =4.5V, I =100mA
GS
0.566
0.16
0.08
nC
nC
nC
mS
pF
pF
pF
ns
ns
g(tot)
gs
D
=10V, V =4.5V, I =100mA
GS
D
=10V, V =4.5V, I =100mA
gd
GS
D
g
=10V, I =100mA
100
FS
D
C
C
C
=3.0V, V =0, f=1.0MHz
4.0
9.0
9.5
50
rss
iss
GS
=3.0V, V =0, f=1.0MHz
GS
=3.0V, V =0, f=1.0MHz
oss
GS
t
t
=3.0V, V =2.5V, I =10mA
GS
on
off
D
=3.0V, V =2.5V, I =10mA
75
GS
D
R3 (22-August 2011)
CMUDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-523 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: C7A
R3 (22-August 2011)
www.centralsemi.com
相关型号：
CMUDM7005TR
Small Signal Field-Effect Transistor, 0.915A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ULTRAMINI-3
CENTRAL
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