CMST5086BK [CENTRAL]
暂无描述;
| 型号： | CMST5086BK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总2页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMST5086
CMST5087
www.centralsemi.com
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST5086,
CMST5087 types are PNP silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a SUPERmini™ surface mount package,
designed for applications requiring high gain and low
noise.
MARKING CODES: CMST5086: 2PC
CMST5087: 2QC
SOT-323 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
V
V
V
50
50
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
3.0
V
Continuous Collector Current
Power Dissipation
I
50
mA
mW
°C
C
P
275
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
455
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
CMST5086
MIN MAX
CMST5087
MIN MAX
SYMBOL
TEST CONDITIONS
UNITS
I
I
V
V
=10V
=35V
-
-
10
-
-
10
50
-
nA
nA
V
CBO
CBO
CB
CB
50
BV
BV
BV
I =100μA
50
50
3.0
-
-
50
50
3.0
-
CBO
CEO
EBO
C
I =1.0mA
-
-
-
V
C
I =100μA
-
V
E
V
V
I =10mA, I =1.0mA
0.30
0.85
500
-
0.30
0.85
V
CE(SAT)
BE(SAT)
FE
C
B
I =10mA, I =1.0mA
-
-
V
C
B
h
h
h
V
=5.0V, I =0.1mA
150
150
150
40
-
250 800
CE
CE
CE
CE
CB
CE
CE
C
V
V
V
V
V
V
=5.0V, I =1.0mA
250
250
40
-
-
-
FE
C
=5.0V, I =10mA
-
FE
C
f
=5.0V, I =500μA, f=20MHz
-
-
MHz
pF
T
C
C
=5.0V, I =0, f=1.0MHz
4.0
600
4.0
ob
fe
E
h
=5.0V, I =1.0mA, f=1.0kHz
150
250 900
C
NF
=5.0V, I =20mA, R =10kΩ
C S
f=10Hz to 15.7kHz
-
-
3.0
3.0
-
-
2.0
2.0
dB
dB
NF
V
=5.0V, I =100μA, R =3.0kΩ
CE
f=1.0kHz
C
S
R3 (9-February 2010)
CMST5086
CMST5087
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-323 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMST5086: 2PC
CMST5087: 2QC
R3 (9-February 2010)
www.centralsemi.com
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