CMST5087 [CENTRAL]
SURFACE MOUNT SUPERmini PNP SILICON TRANSISTORS; 表面安装超迷你PNP硅晶体管
| 型号： | CMST5087 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT SUPERmini PNP SILICON TRANSISTORS |
| 文件： | 总2页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMST5086
CMST5087
Central
Semiconductor Corp.
SURFACE MOUNT
TM
SUPERmini
DESCRIPTION:
PNP SILICON TRANSISTORS
The CENTRAL SEMICONDUCTOR CMST5086,
CMST5087 types are PNP silicon transistors
manufactured by the epitaxial planar process,
TM
epoxy molded in a SUPERmini surface mount
package, designed for applications requiring
high gain and low noise.
MARKING CODES: CMST5086: 2PC
CMST5087: 2QC
SOT-323 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
50
50
3.0
50
CBO
CEO
EBO
C
P
I
Power Dissipation
275
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J stg
-65 to +150
455
°C
°C/W
Θ
JA
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
CMST5086
CMST5087
SYMBOL
CBO
CBO
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
I
I
V
V
=10V
=35V
10
50
10
50
nA
nA
V
CB
CB
BV
BV
BV
I =100µA
50
50
CBO
CEO
EBO
C
I =1.0mA
50
50
V
C
I =100µA
3.0
3.0
V
E
V
V
I =10mA, I =1.0mA
0.30
0.85
0.30
0.85
V
CE(SAT)
BE(SAT)
FE
C
B
I =10mA, I =1.0mA
V
C
B
h
h
h
V
=5.0V, I =0.1mA
150
150
150
40
500
250 800
250
250
CE
CE
CE
CE
CB
CE
CE
C
V
V
V
V
V
V
=5.0V, I =1.0mA
FE
C
=5.0V, I =10mA
FE
C
f
=5.0V, I =500µA, f=20MHz
40
MHz
pF
T
C
C
=5.0V, I =0, f=1.0MHz
4.0
600
4.0
ob
fe
E
h
=5.0V, I =1.0mA, f=1.0kHz
150
250 900
C
NF
=5.0V, I =20mA, R =10kΩ
C S
f=10Hz to 15.7kHz
=5.0V, I =100µA, R =3.0kΩ
3.0
3.0
2.0
2.0
dB
dB
NF
V
CE
f=1.0kHz
C
S
R2 (4-January 2004)
TM
CMST5086
CMST5087
Central
Semiconductor Corp.
SURFACE MOUNT
TM
SUPERmini
PNP SILICON TRANSISTORS
SOT-323 CASE - MECHANICAL OUTLINE
CMST5086
CMST5087
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE:
CMST5086 - 2PC
CMST5087 - 2QC
R2 (4-January 2004)
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