CMPTA96LEADFREE [CENTRAL]

Small Signal Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3;

CMPTA96LEADFREE


型号：	CMPTA96LEADFREE
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	Small Signal Bipolar Transistor, 0.5A I(C), 450V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 光电二极管晶体管
文件：	总2页 (文件大小：322K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CMPTA96

www.centralsemi.com

SURFACE MOUNT

EXTREMELY HIGH VOLTAGE

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA96 type

is a surface mount epoxy molded PNP silicon planar

epitaxial transistor designed for extremely high voltage

applications.

MARKING CODE: C96

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

V

A

Collector-Base Voltage

V

V

V

450

450

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

V

6.0

V

Continuous Collector Current

Power Dissipation

I

500

mA

mW

°C

C

P

350

D

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

J

stg

Θ

°C/W

JA

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

A

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

I

I

V

V

=400V

=4.0V

100

100

nA

nA

V

CBO

EBO

CB

BE

BV

BV

BV

I =100µA

450

450

6.0

500

490

9.7

CBO

CEO

C

I =1.0mA

V

C

I =10µA

V

EBO

E

V

V

V

V

I =1.0mA, I =0.1mA

0.20

0.30

0.50

1.0

V

CE(SAT)

CE(SAT)

CE(SAT)

BE(SAT)

FE

C

B

I =10mA, I =1.0mA

V

C

B

I =50mA, I =5.0mA

0.15

V

C

B

I =10mA, I =1.0mA

V

C

B

h

h

h

h

V

=10V, I =1.0mA

40

50

45

25

20

CE

CE

CE

CE

CE

CB

EB

C

V

V

V

V

V

V

=10V, I =10mA

120

35

200

FE

C

=10V, I =50mA

FE

C

=10V, I =100mA

FE

C

f

=10V, I =10mA, f=10MHz

MHz

pF

T

C

C

C

=20V, I =0, f=1.0MHz

7.0

ob

ib

E

=0.5V, I =0, f=1.0MHz

130

pF

C

R3 (3-February 2010)

CMPTA96

SURFACE MOUNT

EXTREMELY HIGH VOLTAGE

PNP SILICON TRANSISTOR

SOT-23 CASE - MECHANICAL OUTLINE

LEAD CODE:

1) Base

2) Emitter

3) Collector

MARKING CODE: C96

R3 (3-February 2010)

www.centralsemi.com

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