CMPTH10 [CENTRAL]
NPN SILICON RF TRANSISTOR; NPN硅晶体管RF
| 型号： | CMPTH10 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | NPN SILICON RF TRANSISTOR |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
S e m ic o n d u c t o r Co r p .
CMPTH10
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPTH10typeisanNPNsiliconRFtransistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designedforlownoiseUHF/VHFamplifierand
high output oscillator applications.
SOT-23 CASE
Marking code is C3E.
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
V
V
V
P
30
25
3.0
350
V
V
V
CBO
CEO
EBO
D
mW
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
-65 to +150
357
C
C/W
J stg
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
100
UNITS
I
I
V
V
=25V
=2.0V
nA
nA
V
V
V
CBO
EBO
CBO
CEO
EBO
CE(SAT)
BE(ON)
FE
T
cb
CB
EB
BV
BV
BV
V
V
h
f
C
I =100µA
30
25
3.0
C
I =1.0mA
C
I =10µA
E
I =4.0mA, I =0.4mA
0.50
0.95
V
V
C
B
B
V
=10V, I =4.0mA
CE
CE
CE
CB
CB
CB
V
V
V
V
V
=10V, I =4.0mA
C
60
650
=10V, I =4.0mA, f=100MHz
MHz
pF
pF
C
=10V, I =0, f=1.0MHz
E
0.70
0.65
9.0
C
rb’C
=10V, I =0, f=1.0MHz
rb
E
=10V, I =4.0mA, f=31.8MHz
C
ps
c
208
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R2
209
相关型号：
CMPTH10BK
RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,
CENTRAL
CMPTH10TR13
RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,
CENTRAL
CMPTH10TR13LEADFREE
RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,
CENTRAL
CMPTH10TRLEADFREE
RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN,
CENTRAL
CMPTH81BK
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, PNP, PLASTIC PACKAGE-3
CENTRAL
©2020 ICPDF网 联系我们和版权申明