CMPTA92PNP [CENTRAL]
SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR; 互补硅高压晶体管
| 型号： | CMPTA92PNP |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR |
| 文件： | 总2页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CMPTA42 NPN
CMPTA92 PNP
Semiconductor Corp.
SILICON COMPLEMENTARY
HIGH VOLTAGE TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA42,
CMPTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage applications.
MARKING CODE:
CMPTA42: C1D
CMPTA92: C2D
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
CMPTA42
300
CMPTA92
300
UNITS
V
V
V
mA
mW
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
V
V
V
CBO
CEO
EBO
300
6.0
300
5.0
I
500
350
C
P
D
T ,T
J stg
-65 to +150
357
°C
°C/W
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
CMPTA42
CMPTA92
SYMBOL
TEST CONDITIONS
MIN MAX
MIN
MAX
UNITS
I
I
I
V
V
V
=200V
=6.0V
=3.0V
100
250
-
nA
nA
nA
V
CBO
EBO
EBO
CB
BE
BE
100
-
300
300
6.0
100
BV
BV
BV
I =100µA
300
300
5.0
CBO
CEO
EBO
C
I =1.0mA
V
C
I =100µA
V
E
V
V
I =20mA, I =2.0mA
0.5
0.5
0.9
V
CE(SAT)
BE(SAT)
FE
C
B
I =20mA, I =2.0mA
0.9
V
C
B
h
h
h
V
=10V, I =1.0mA
25
25
40
25
50
CE
CE
CE
CE
CB
C
V
V
V
V
=10V, I =10mA
40
FE
C
=10V, I =30mA
40
FE
C
f
=20V, I =10mA, f=100MHz
50
MHz
pF
T
C
C
=20V, I =0, f=1.0MHz
6.0
6.0
ob
E
R5 (6-May 2004)
TM
CMPTA42 NPN
CMPTA92 PNP
Central
Semiconductor Corp.
SILICON COMPLEMENTARY
HIGH VOLTAGE TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE:
CMPTA42: C1D
CMPTA92: C2D
R5 (6-May 2004)
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