CMPTA92ETRPBFREE [CENTRAL]
暂无描述;
| 型号： | CMPTA92ETRPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 小信号双极晶体管 光电二极管 高压 |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMPTA42E NPN
CMPTA92E PNP
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
SURFACE MOUNT
DESCRIPTION:
The Central Semiconductor CMPTA42E &
CMPTA92E types are Enhanced versions of the
CMPTA42 & CMPTA92 complementary surface
mount high voltage transistors.
COMPLEMENTARY
HIGH VOLTAGE SILICON TRANSISTORS
MARKING CODES: CMPTA42E: C1DE
CMPTA92E: C2DE
FEATURED ENHANCED SPECIFICATIONS:
♦ BV
♦ BV
from 300V min to 350V min.
from 300V min to 350V min.
♦ h from 25 min to 50 min.
CBO
CEO
SOT-23 CASE
FE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
350
350
6.0
♦
♦
CBO
CEO
EBO
I
500
350
mA
mW
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
T , T
stg
-65 to +150
357
°C
J
Thermal Resistance
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
TYP
MIN CMPTA42E CMPTA92E
SYMBOL
TEST CONDITIONS
MAX UNITS
I
I
V
V
=200V
=3.0V
250
100
nA
nA
V
V
V
CBO
EBO
CBO
CEO
EBO
CB
BE
BV
BV
BV
V
I =100µA
350
350
6.0
590
475
8.7
500
450
9.6
♦
♦
C
I =1.0mA
C
I =100µA
E
I =50mA, I =5.0mA
125
150
350
0.9
mV
V
♦
CE(SAT)
BE(SAT)
C
B
B
V
I =20mA, I =2.0mA
C
h
h
h
V
=10V, I =1.0mA
50
50
50
50
110
110
110
75
105
105
105
75
♦
♦
♦
FE
FE
FE
CE
CE
CE
CE
CB
C
V
V
V
V
=10V, I =10mA
C
=10V, I =30mA
C
f
=20V, I =10mA, f=100MHz
MHz
pF
T
C
C
=20V, I =0, f=1.0MHz
6.0
ob
E
♦ Enhanced specification.
R2 (10-October 2003)
TM
CMPTA42E NPN
CMPTA92E PNP
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE SILICON
TRANSISTORS
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE:
CMPTA42E: C1DE
CMPTA92E: C2DE
R2 (10-October 2003)
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