CMPTA42ETRLEADFREE [CENTRAL]
Transistor;
| 型号： | CMPTA42ETRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPTA42E NPN
CMPTA92E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
www.centralsemi.com
DESCRIPTION:
COMPLEMENTARY
The CENTRAL SEMICONDUCTOR CMPTA42E and
CMPTA92E are Enhanced versions of the CMPTA42
and CMPTA92 complementary surface mount high
voltage transistors.
HIGH VOLTAGE
SILICON TRANSISTORS
MARKING CODES: CMPTA42E: C1DE
CMPTA92E: C2DE
FEATURED ENHANCED SPECIFICATIONS:
♦ BV
from 300V min to 350V min.
from 300V min to 350V min.
CBO
CEO
SOT-23 CASE
♦ BV
♦ h from 25 min to 50 min.
FE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
350
350
♦
♦
CBO
V
CEO
V
6.0
V
EBO
Continuous Collector Current
Power Dissipation
I
500
mA
mW
°C
C
P
350
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
TYP
SYMBOL
TEST CONDITIONS
MIN CMPTA42E CMPTA92E MAX
UNITS
nA
nA
V
I
I
V
V
=200V
=3.0V
250
100
CBO
EBO
CB
EB
♦
♦
BV
BV
BV
I =100µA
350
350
6.0
590
475
8.7
500
450
9.6
CBO
CEO
C
I =1.0mA
V
C
I =100µA
V
EBO
E
♦
V
I =50mA, I =5.0mA
125
150
350
mV
V
CE(SAT)
BE(SAT)
FE
C
B
V
I =20mA, I =2.0mA
0.9
C
B
♦
♦
♦
h
h
h
V
=10V, I =1.0mA
50
50
50
50
110
110
110
75
105
105
105
75
CE
CE
CE
CE
CB
C
V
V
V
V
=10V, I =10mA
FE
C
=10V, I =30mA
FE
C
f
=20V, I =10mA, f=100MHz
MHz
pF
T
C
C
=20V, I =0, f=1.0MHz
6.0
ob
E
♦ Enhanced specification
R3 (3-February 2010)
CMPTA42E NPN
CMPTA92E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMPTA42E: C1DE
CMPTA92E: C2DE
R3 (3-February 2010)
www.centralsemi.com
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