CMPTA44 [CENTRAL]

NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR; NPN硅极高压晶体管

CMPTA44


型号：	CMPTA44
厂家：	CENTRAL SEMICONDUCTOR CORP
描述：	NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR NPN硅极高压晶体管晶体小信号双极晶体管光电二极管高压
文件：	总2页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TM

Ce n t r a l

CMPTA44

S e m ic o n d u c t o r Co r p .

NPN SILICON EXTREMELY

HIGH VOLTAGE TRANSISTOR

DESCRIPTION:

TheCENTRALSEMICONDUCTORCMPTA44

type is a surface mount epoxy molded silicon

planar epitaxial transistors designed for

extremely high voltage applications.

Marking Code is C3Z.

SOT-23 CASE

o

MAXIMUM RATINGS (T =25 C)

A

SYMBOL

UNITS

V

V

V

mA

mW

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V

V

V

I

450

400

6.0

300

350

CBO

CEO

EBO

C

Power Dissipation

P

D

Operating and Storage

Junction Temperature

Thermal Resistance

o

T ,T

J stg

JA

-65 to +150

357

C

o

Θ

C/W

o

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

A

SYMBOL

TEST CONDITIONS

MIN

MAX

100

500

100

UNITS

I

I

I

V

V

V

=400V

=400V

=4.0V

nA

nA

nA

V

V

V

V

V

V

V

CBO

CES

EBO

CB

CE

BE

BV

BV

BV

BV

V

V

V

V

I =100µA

450

450

400

6.0

CBO

CES

CEO

EBO

CE(SAT)

CE(SAT)

CE(SAT)

BE(SAT)

C

I =100µA

C

I =1.0mA

C

I =10µA

E

I =1.0mA, I =0.1mA

0.40

0.50

0.75

0.75

C

B

B

B

B

I =10mA, I =1.0mA

C

I =50mA, I =5.0mA

C

I =10mA, I =1.0mA

V

C

h

h

V

=10V, I =1.0mA

40

50

FE

CE

CE

C

V

=10V, I =10mA

C

200

FE

206

SYMBOL

TEST CONDITIONS

MIN

45

20

MAX

UNITS

h

h

V

V

V

V

V

=10V, I =50mA

FE

FE

CE

CE

CE

CB

EB

C

=10V, I =100mA

C

f

C

=10V, I =10mA, f=10MHz

C

20

MHz

pF

pF

T

=20V, I =0, f=1.0MHz

E

7.0

130

ob

C

=0.5V, I =0, f=1.0MHz

C

ib

All dimensions in inches (mm).

LEAD CODE:

1) BASE

2) EMITTER

3) COLLECTOR

R2

207

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