CMPT591 [CENTRAL]
SURFACE MOUNT PNP SILICON TRANSISTOR; 表面贴装型PNP硅晶体管
| 型号： | CMPT591 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT PNP SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CMPT591E
Semiconductor Corp.
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT591E
type is a PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
current, general purpose amplifier applications.
Marking Code is C59.
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
80
60
5.0
1.0
200
2.0
350
V
V
CBO
CEO
EBO
V
V
V
A
I
I
I
C
Base Current
mA
A
B
CM
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
P
mW
D
T ,T
stg
-65 to +150
357
°C
°C/W
J
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
CBO
EBO
TEST CONDITIONS
MIN
MAX
100
UNITS
I
I
V
V
=60V
nA
nA
V
CB
EB
=4.0V
100
BV
BV
BV
I =100µA
80
60
5.0
CBO
CEO
C
I =10mA
V
C
I =100µA
V
EBO
E
V
V
V
V
I =500mA, I =50mA
0.20
0.40
1.1
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
C
B
I =1.0A, I =100mA
V
C
B
B
I =1.0A, I =100mA
V
C
V
=5.0V, I =1.0A
1.0
V
CE
CE
CE
CE
CE
CE
CB
C
h
h
h
h
V
V
V
V
V
V
=5.0V, I =1.0mA
200
200
50
15
150
C
=5.0V, I =500mA
600
FE
C
=5.0V, I =1.0A
FE
C
=5.0V, I =2.0A
FE
C
f
=10V, I =50mA, f=100MHz
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
10
ob
E
R2 ( 30-August 2001)
TM
CMPT591E
Central
Semiconductor Corp.
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C59
R2 ( 30-August 2001)
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