CMPD4150 [CENTRAL]
high current high speed switching diodeHIGH CURRENT HIGH SPEED SWITCHING DIODE; 大电流高速开关diodeHIGH电流高速开关二极管
| 型号： | CMPD4150 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | high current high speed switching diodeHIGH CURRENT HIGH SPEED SWITCHING DIODE |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
CMPD4150
S e m ic o n d u c t o r Co r p .
HIGH CURRENT
HIGH SPEED
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD4150 type is an ultra-high speed silicon
switching diode manufactured by the epitaxial
planar process, in an epoxy molded surface
mount package, designed for high speed
switching applications.
Marking code is ABA.
SOT-23 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
V
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
V
V
I
50
50
R
RRM
F
V
250
250
4000
1000
350
mA
mA
mA
mA
mW
I
I
I
FRM
FSM
FSM
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
J stg
JA
-65 to +150
357
C
C/W
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
0.62
0.74
0.86
0.92
1.0
UNITS
nA
V
I
V
V
F
V
V
F
V
C
T
t
V =50V
R
F
R
I =1.0mA
F
0.54
0.66
0.76
0.82
0.87
I =10mA
V
V
V
V
pF
ns
F
I =50mA
F
F
I =100mA
F
I =200mA
F
F
V =0, f=1 MHz
4.0
4.0
R
I =I =10mA, R =100Ω, Rec. to 1.0mA
rr
R F
L
136
All dimensions in inches (mm).
NO
A
CONNECTION
C
R2
137
相关型号：
CMPD4150TRLEADFREE
Rectifier Diode, 1 Element, 0.25A, 50V V(RRM), Silicon, PLASTIC PACKAGE-3
CENTRAL
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