CMPD4150_10 [CENTRAL]
SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE; 表面安装高电流，高速硅开关二极管
| 型号： | CMPD4150_10 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT HIGH CURRENT, HIGH SPEED SILICON SWITCHING DIODE |
| 文件： | 总2页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPD4150
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT, HIGH SPEED
SILICON SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD4150
type is an ultra-high speed silicon switching diode
manufactured by the epitaxial planar process, in an
epoxy molded surface mount package, designed for
high speed switching applications.
MARKING CODE: ABA
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
V
50
50
R
V
V
RRM
I
250
mA
mA
A
F
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
I
250
FRM
I
4.0
FSM
FSM
I
1.0
A
P
350
mW
°C
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
V =50V
MIN
MAX
100
0.62
0.74
0.86
0.92
1.0
UNITS
I
nA
V
R
R
V
V
V
V
V
I =1.0mA
0.54
0.66
0.76
0.82
0.87
F
F
F
F
F
F
I =10mA
V
F
I =50mA
V
F
I =100mA
V
F
I =200mA
V
F
C
V =0, f=1.0MHz
4.0
pF
ns
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA
4.0
rr
R
F
L
R6 (25-January 2010)
CMPD4150
SURFACE MOUNT
HIGH CURRENT, HIGH SPEED
SILICON SWITCHING DIODE
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode
2) No Connection
3) Cathode
MARKING CODE: ABA
R6 (25-January 2010)
www.centralsemi.com
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