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CMLM0585BKTIN/LEAD [CENTRAL]

Transistor;
CMLM0585BKTIN/LEAD
型号： CMLM0585BKTIN/LEAD
厂家： CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述：

Transistor
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中文：  中文翻译
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CMLM0585  
™
Multi Discrete Module  
www.centralsemi.com  
SURFACE MOUNT SILICON  
P-CHANNEL MOSFET AND  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMLM0585 is a  
Multi Discrete Module™ consisting of a single P-Channel  
LOW V SCHOTTKY DIODE  
F
enhancement-mode MOSFET and a low V Schottky  
F
diode packaged in a space saving SOT-563 surface  
mount case. This device is designed for small signal  
general purpose applications where size and opertional  
efficiency are prime requirements.  
MARKING CODE: 85C  
SOT-563 CASE  
FEATURES:  
• High current MOSFET (I =650mA)  
D
• ESD protection up to 1800V (Human Body Model)  
APPLICATIONS:  
• DC-DC converters  
• Boost converters  
• Motor drive controls  
• Battery powered portable equipment  
• Low r  
MOSFET (0.5Ω MAX @ V =2.5V)  
DS(on)  
• Low V Schottky diode (0.47V MAX @ 0.5A)  
GS  
F
MAXIMUM RATINGS - CASE: (T =25°C)  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
Operating and Storage Junction Temperature  
Thermal Resistance (Note 1)  
SYMBOL  
UNITS  
A
P
P
P
T , T  
Θ
350  
300  
150  
mW  
mW  
mW  
°C  
D
D
D
-65 to +150  
357  
J
stg  
°C/W  
JA  
MAXIMUM RATINGS - Q1: (T =25°C)  
SYMBOL  
UNITS  
V
V
mA  
A
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
V
V
I
20  
8.0  
650  
DS  
GS  
D
MAXIMUM RATINGS - D1: (T =25°C)  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current, tp≤1.0ms  
Peak Forward Surge Current, tp=8.0ms  
SYMBOL  
UNITS  
V
mA  
A
A
A
V
40  
500  
3.5  
10  
RRM  
F
I
I
FRM  
I
FSM  
ELECTRICAL CHARACTERISTICS - Q1: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
, I  
V
V
V
V
V
V
V
V
=4.5V, V =0  
10  
100  
μA  
nA  
V
V
V
Ω
Ω
Ω
GSSF GSSR  
DSS  
GS  
DS  
GS  
DS  
=16V, V =0  
GS  
BV  
V
V
r
r
r
=0, I =250μA  
20  
0.5  
DSS  
GS(th)  
SD  
DS(ON)  
DS(ON)  
DS(ON)  
D
=V , I =250μA  
1.0  
1.1  
0.36  
0.5  
DS GS  
D
=0, I =250mA  
GS  
GS  
GS  
GS  
S
=4.5V, I =350mA  
0.25  
0.37  
D
D
D
=2.5V, I =300mA  
=1.8V, I =150mA  
0.8  
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2  
R3 (5-June 2013)  
CMLM0585  
™
Multi Discrete Module  
SURFACE MOUNT SILICON  
P-CHANNEL MOSFET AND  
LOW V SCHOTTKY DIODE  
F
ELECTRICAL CHARACTERISTICS - Q1 Continued: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
200  
TYP  
MAX  
UNITS  
mS  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
g
V
V
V
V
V
V
V
V
V
=10V, I =200mA  
FS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DD  
DD  
D
=16V, V =0, f=1.0MHz  
25  
100  
21  
1.2  
0.24  
0.36  
38  
rss  
iss  
oss  
g(tot)  
gs  
gd  
GS  
=16V, V =0, f=1.0MHz  
GS  
=16V, V =0, f=1.0MHz  
GS  
GS  
=10V, V =4.5V, I =200mA  
D
=10V, V =4.5V, I =200mA  
GS  
D
D
=10V, V =4.5V, I =200mA  
GS  
=10V, V =4.5V, I =200mA, R =10Ω  
GS D G  
=10V, V =4.5V, I =200mA, R =10Ω  
GS  
48  
ns  
D
G
ELECTRICAL CHARACTERISTICS - D1: (T =25°C)  
SYMBOL TEST CONDITIONS  
A
MIN  
TYP  
MAX  
20  
100  
UNITS  
μA  
μA  
V
V
V
V
V
V
pF  
I
I
V =10V  
R
R
R
V =30V  
R
BV  
I =500μA  
40  
R
R
V
V
V
V
V
I =100μA  
0.13  
0.21  
0.27  
0.35  
0.47  
50  
F
F
F
F
F
F
I =1.0mA  
F
I =10mA  
F
I =100mA  
F
I =500mA  
F
C
V =1.0V, f=1.0MHz  
T
R
SOT-563 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) Gate Q1  
2) Source Q1  
3) Cathode D1  
4) Anode D1  
5) Anode D1  
6) Drain Q1  
MARKING CODE: 85C  
R3 (5-June 2013)  
www.centralsemi.com  
CMLM0585  
™
Multi Discrete Module  
SURFACE MOUNT SILICON  
P-CHANNEL MOSFET AND  
LOW V SCHOTTKY DIODE  
F
MOSFET TYPICAL ELECTRICAL CHARACTERISTICS  
R3 (5-June 2013)  
www.centralsemi.com  
CMLM0585  
™
Multi Discrete Module  
SURFACE MOUNT SILICON  
P-CHANNEL MOSFET AND  
LOW V SCHOTTKY DIODE  
F
DIODE TYPICAL ELECTRICAL CHARACTERISTICS  
R3 (5-June 2013)  
www.centralsemi.com  

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