CMLDM8120BKPBFREE [CENTRAL]
Transistor,;
| 型号： | CMLDM8120BKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总3页 (文件大小：526K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLDM8120
CMLDM8120G*
www.centralsemi.com
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are enhancement-mode P-Channel MOSFETs,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low r
theshold voltage.
and low
DS(on)
MARKING CODES:
CMLDM8120:
C81
CMLDM8120G*: C8G
SOT-563 CASE
Device is Halogen Free by design
*
FEATURES:
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
• Low r
DS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small SOT-563 package
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t≤5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
V
A
V
V
I
I
20
8.0
860
950
360
4.0
4.0
350
300
DS
GS
D
D
V
mA
mA
mA
A
I
S
I
I
DM
SM
A
P
P
P
mW
mW
mW
°C
D
D
D
150
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
=8.0V, V =0
1.0
5.0
24
50
500
nA
nA
V
V
V
Ω
Ω
Ω
Ω
GSSF GSSR
DSS
GS
DS
GS
DS
=20V, V =0
GS
BV
V
V
r
r
r
r
=0, I =250μA
20
0.45
DSS
GS(th)
SD
DS(ON)
DS(ON)
DS(ON)
DS(ON)
D
=V , I =250μA
0.76
1.0
0.9
0.15
0.142
0.20
0.24
DS GS
D
=0V, I =360mA
GS
GS
GS
GS
GS
DS
DS
DS
DS
S
=4.5V, I =0.95A
=4.5V, I =0.77A
=2.5V, I =0.67A
=1.8V, I =0.2A
=10V, I =0.81A
=16V, V =0, f=1.0MHz
=16V, V =0, f=1.0MHz
=16V, V =0, f=1.0MHz
0.085
0.085
0.13
D
D
D
D
D
GS
GS
GS
0.19
g
2.0
S
FS
rss
iss
C
C
C
80
200
60
pF
pF
pF
oss
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
R6 (8-June 2015)
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
CMLDM8120
CMLDM8120G*
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
TYP
UNITS
Q
Q
Q
V
V
V
V
V
=10V, V =4.5V, I =1.0A
3.56
nC
g(tot)
gs
gd
DS
DS
DS
DD
DD
GS
D
=10V, V =4.5V, I =1.0A
0.36
1.52
20
nC
nC
ns
GS
D
D
=10V, V =4.5V, I =1.0A
GS
t
t
=10V, V =4.5V, I =0.95A, R =6Ω
on
off
GS D G
=10V, V =4.5V, I =0.95A, R =6Ω
GS
25
ns
D
G
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Drain
2) Drain
3) Gate
4) Source
5) Drain
6) Drain
MARKING CODES:
CMLDM8120: C81
CMLDM8120G*: C8G
Device is Halogen Free by design
*
R6 (8-June 2015)
www.centralsemi.com
CMLDM8120
CMLDM8120G*
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
SERVICES
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development/Multi Discrete Modules (MDM™)
• Bare Die Available for Hybrid Applications
LIMITATIONS AND DAMAGES DISCLAIMER: In no event shall Central be liable for any collateral, indirect,
punitive, incidental, consequential, or exemplary damages in connection with or arising out of a purchase order
or contract or the use of products provided hereunder, regardless of whether Central has been advised of
the possibility of such damages. Excluded damages shall include, but not be restricted to: cost of removal or
reinstallation, rework, ancillary costs to the procurement of substitute products, loss of profits, loss of savings, loss
of use, loss of data, or business interruption. No claim, suit, or action shall be brought against Central more than
two (2) years after the related cause of action has occurred.
In no event shall Central’s aggregate liability from any warranty, indemnity, or other obligation arising out of or in
connection with a purchase order or contract, or any use of any Central product provided hereunder, exceed the
total amount paid to Central for the specific products sold under a purchase order or contract with respect to which
losses or damages are claimed. The existence of more than one (1) claim against the specific products sold to
Buyer under a purchase order or contract shall not enlarge or extend this limit.
Buyer understands and agrees that the foregoing liability limitations are essential elements of a purchase order
or contract and that in the absence of such limitations, the material and economic terms of the purchase order or
contract would be substantially different.
R6 (8-June 2015)
www.centralsemi.com
相关型号：
CMLDM8120GTR
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6
CENTRAL
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