CMLDM8120GBK [CENTRAL]
暂无描述;
| 型号： | CMLDM8120GBK |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 小信号场效应晶体管 |
| 文件： | 总2页 (文件大小：511K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMLDM8120
CMLDM8120G*
www.centralsemi.com
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are Enhancement-mode P-Channel Field Effect
Transistors, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low r
and Low Theshold Voltage.
DS(on)
MARKING CODES:
CMLDM8120:
C81
CMLDM8120G*: C8G
SOT-563 CASE
Device is Halogen Free by design
*
FEATURES:
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
• Low r
DS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small SOT-563 package
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Drain-Source Voltage
V
V
20
8.0
DS
GS
Gate-Source Voltage
V
Continuous Drain Current (Steady State)
Continuous Drain Current, t≤5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
I
860
mA
mA
mA
A
D
D
I
950
I
360
S
I
4.0
DM
I
4.0
A
SM
P
P
P
350
mW
mW
mW
°C
D
D
D
Power Dissipation (Note 2)
300
Power Dissipation (Note 3)
150
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
50
UNITS
nA
I
I
, I
V
V
=8.0V, V =0
1.0
5.0
GSSF GSSR
GS
DS
GS
DS
=20V, V =0
GS
500
nA
DSS
BV
V
V
V
V
V
V
V
=0, I =250μA
20
0.45
24
0.76
V
V
V
Ω
Ω
Ω
Ω
DSS
GS(th)
SD
DS(ON)
DS(ON)
DS(ON)
DS(ON)
D
V
V
r
r
r
r
=V , I =250μA
=0V, I =360mA
=4.5V, I =0.95A
=4.5V, I =0.77A
=2.5V, I =0.67A
=1.8V, I =0.2A
1.0
0.9
0.15
0.142
0.20
0.24
DS GS
D
GS
GS
GS
GS
GS
S
0.085
0.085
0.13
D
D
D
D
0.19
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R3 (18-January 2010)
CMLDM8120
CMLDM8120G*
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
MIN
2.0
TYP
MAX
UNITS
S
pF
pF
pF
g
V
V
V
V
V
V
=10V, I =0.81A
FS
DS
DS
DS
DS
DD
DD
D
C
C
C
=16V, V =0, f=1.0MHz
GS
80
200
60
20
25
rss
iss
oss
=16V, V =0, f=1.0MHz
GS
=16V, V =0, f=1.0MHz
GS
t
t
=10V, V =4.5V, I =0.95A, R =6Ω
=10V, V =4.5V, I =0.95A, R =6Ω
GS
ns
ns
on
off
GS
D
D
G
G
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Drain
2) Drain
3) Gate
4) Source
5) Drain
6) Drain
MARKING CODES:
CMLDM8120: C81
CMLDM8120G*: C8G
Device is Halogen Free by design
*
R3 (18-January 2010)
www.centralsemi.com
相关型号：
CMLDM8120GTR
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PICOMINI-6
CENTRAL
©2020 ICPDF网 联系我们和版权申明