CJD31CTR13PBFREE [CENTRAL]
Transistor,;
| 型号： | CJD31CTR13PBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CJD31C NPN
CJD32C PNP
www.centralsemi.com
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD31C and
CJD32C are complementary silicon power transistors
manufactured by the epitaxial base process, mounted
in a surface mount package, and designed for power
amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
100
100
V
CBO
CEO
EBO
V
V
V
V
5.0
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
I
3.0
A
C
I
5.0
A
CM
I
1.0
A
B
P
15
W
D
D
Power Dissipation (T =25°C)
A
Operating and Storage Junction Temperature
P
1.56
-65 to +150
8.33
80.1
W
T , T
°C
°C/W
°C/W
J
stg
Thermal Resistance
Θ
JC
JA
Thermal Resistance
Θ
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=60V
=100V
=5.0V
50
μA
CEO
CES
EBO
CE
CE
EB
20
μA
mA
V
1.0
BV
I =30mA
100
CEO
CE(SAT)
BE(ON)
FE
C
V
V
I =3.0A, I =375mA
1.2
1.8
V
C
B
V
=4.0V, I =3.0A
V
CE
CE
CE
CE
CE
C
h
h
V
V
V
V
=4.0V, I =1.0A
25
10
3.0
20
C
=4.0V, I =3.0A
50
FE
C
f
=10V, I =500mA, f=1.0MHz
MHz
T
C
h
=10V, I =500mA, f=1.0kHz
C
fe
R3 (21-January 2013)
CJD31C NPN
CJD32C PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R3 (21-January 2013)
www.centralsemi.com
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