CJD32C [CENTRAL]
COMPLEMENTARY SILICON POWER TRANSISTOR; 互补硅功率晶体管
| 型号： | CJD32C |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | COMPLEMENTARY SILICON POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CJD31C NPN
CJD32C PNP
Semiconductor Corp.
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD31C,
CJD32C types are Complementary Silicon Power
Transistors manufactured by the epitaxial base
process, mounted in a surface mount package
designed for power amplifier and high speed
switching applications.
MARKING CODE: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
V
V
V
100
100
5.0
3.0
5.0
1.0
15
V
V
CBO
CEO
EBO
V
A
A
A
W
W
I
C
I
CM
B
D
D
I
Power Dissipation
P
P
Power Dissipation (T =25°C)
1.56
A
Operating and Storage
Junction Temperature
T ,T
Θ
-65 to +150
8.33
°C
°C/W
°C/W
J
stg
Thermal Resistance
Thermal Resistance
JC
JA
Θ
80.1
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
50
UNITS
µA
µA
mA
V
I
I
I
V
V
V
=60V
=100V
=5.0V
CEO
CES
EBO
CE
CE
EB
20
1.0
BV
I =30mA
100
CEO
CE(SAT)
BE(ON)
FE
C
V
V
I =3.0A, I =375mA
1.2
1.8
V
C
B
V
=4.0V, I =3.0A
V
CE
CE
CE
CE
CE
C
h
h
V
V
V
V
=4.0V, I =1.0A
25
10
3.0
20
C
=4.0V, I =3.0A
50
FE
C
f
=10V, I =500mA, f=1.0MHz
MHz
T
C
h
=10V, I =500mA, f=1.0kHz
C
fe
R1 (26-September 2002)
TM
CJD31C NPN
CJD32C PNP
Central
Semiconductor Corp.
COMPLEMENTARY SILICON
POWER TRANSISTOR
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING CODE:
FULL PART
NUMBER
R1 (26-September 2002)
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