CJD200TR13PBFREE [CENTRAL]
Transistor,;
| 型号： | CJD200TR13PBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CJD200 NPN
CJD210 PNP
www.centralsemi.com
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD200 and
CJD210 are complementary silicon power transistors
manufactured in a surface mount package designed for
high current amplifier applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
40
25
V
CBO
CEO
EBO
V
V
V
V
8.0
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
I
5.0
A
C
I
10
A
CM
I
1.0
A
B
P
12.5
1.4
W
D
D
Power Dissipation (T =25°C)
P
W
A
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
10
°C
°C/W
°C/W
J
stg
Θ
JC
JA
Thermal Resistance
Θ
89.3
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=40V
100
nA
CBO
CBO
EBO
CB
CB
EB
=40V, T =125°C
100
100
μA
nA
V
C
=8.0V
BV
I =10mA
25
CEO
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
C
V
V
V
V
V
I =500mA, I =50mA
0.3
0.75
1.8
V
C
B
I =2.0A, I =200mA
V
C
B
I =5.0A, I =1.0A
V
C
B
I =5.0A, I =1.0A
2.5
V
C
B
V
=1.0V, I =2.0A
1.6
V
CE
CE
CE
CE
CE
CB
CB
C
h
h
h
V
V
V
V
V
V
=1.0V, I =500mA
70
45
10
65
C
=1.0V, I =2.0A
180
FE
C
=2.0V, I =5.0A
FE
C
f
=10V, I =100mA, f=10MHz
MHz
pF
T
C
C
C
=10V, I =0, f=0.1MHz (CJD200)
80
ob
ob
E
=10V, I =0, f=0.1MHz (CJD210)
120
pF
E
R3 (21-January 2013)
CJD200 NPN
CJD210 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R3 (21-January 2013)
www.centralsemi.com
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