CJD2955TR13TIN/LEAD [CENTRAL]
Transistor;
| 型号： | CJD2955TR13TIN/LEAD |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CJD2955 PNP
CJD3055 NPN
www.centralsemi.com
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD2955 and
CJD3055 are complementary silicon power transistors
manufactured by the epitaxial base process, mounted
in a surface mount package, and designed for high
current amplifier and switching applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
70
60
V
CBO
CEO
EBO
V
V
V
V
5.0
Continuous Collector Current
Continuous Base Current
Power Dissipation
I
10
A
C
I
6.0
A
B
P
20
W
D
D
Power Dissipation (T =25°C)
A
Operating and Storage Junction Temperature
P
1.75
-65 to +150
6.25
71.4
W
T , T
°C
J
stg
Thermal Resistance
Θ
°C/W
°C/W
JC
JA
Thermal Resistance
Θ
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
I
I
I
V
V
V
V
V
V
=30V
50
μA
CEO
CEV
CEV
CBO
CBO
EBO
CE
CE
CE
CB
CB
EB
=70V, V
=70V, V
=70V
=1.5V
20
2.0
20
μA
mA
μA
mA
μA
V
BE(off)
BE(off)
=1.5V, T =150°C
C
=70V, T =150°C
C
=5.0V
2.0
500
BV
I =30mA
60
CEO
CE(SAT)
CE(SAT)
BE(ON)
FE
C
V
V
V
I =4.0A, I =400mA
1.1
8.0
1.8
100
V
C
B
I =10A, I =3.3A
V
C
B
V
=4.0V, I =4.0A
V
CE
CE
CE
CE
C
h
h
V
V
V
=4.0V, I =4.0A
20
5.0
2.0
C
=4.0V, I =10A
FE
C
f
=10V, I =500mA, f=1.0MHz
MHz
T
C
R4 (21-January 2013)
CJD2955 PNP
CJD3055 NPN
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R4 (21-January 2013)
www.centralsemi.com
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