CET3906EBKPBFREE [CENTRAL]
暂无描述;
| 型号： | CET3906EBKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 暂无描述 晶体 小信号双极晶体管 开关 |
| 文件： | 总2页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CET3904E NPN
CET3906E PNP
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
DESCRIPTION:
The Central Semiconductor CET3904E / CET3906E
Low NPN and PNP Transistors,
TM
COMPLEMENTARY PICOmini
SILICON TRANSISTORS
V
CE(SAT)
respectively, are designed for applications where ultra
small size and power dissipation are the prime
requirements. Packaged in a Tiny Leadless Package
TLP™, these components provide performance
characteristics suitable for the most demanding size
constrained applications.
Top View
Bottom View
SOT-883L CASE
MARKING CODES: CET3904E: C
CET3906E: D
FEATURES:
• Device is Halogen Free by design
• Power Dissipation 250mW
APPLICATIONS:
• Low V
0.1V Typ @ 50mA
• DC / DC Converters
CE(SAT)
• Small, TLP™ 1x0.4mm, SOT-883L Leadless, • Battery powered devices including
Low Profile, Surface Mount Package
Cell Phones and Digital Cameras
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
UNITS
V
V
A
V
V
V
60
40
♦
♦
CBO
CEO
EBO
6.0
200
V
I
mA
mW
mW
°C
C
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
P
P
250
430
-65 to +150
500
D
D
stg
T , T
J
Θ
°C/W
°C/W
JA
JA
Θ
290
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
NPN
TYP
PNP
TYP
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
I
V
=30V, V =3.0V
50
nA
V
V
V
V
CEV
CE EB
BV
BV
BV
V
I =10μA
60
40
6.0
115
60
7.5
90
55
7.9
♦
CBO
CEO
EBO
C
I =1.0mA
C
I =10μA
E
♦
♦
I =10mA, I =1.0mA
0.057
0.050
0.100
CE(SAT)
C
B
♦ Enhanced specification
Notes: (1) FR-4 epoxy PC board, standard mounting conditions
(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm
2
R1 (5-MAY 2008)
CET3904E NPN
CET3906E PNP
TM
Central
ENHANCED SPECIFICATION
Semiconductor Corp.
TM
COMPLEMENTARY PICOmini
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued:
NPN
TYP
0.100
0.75
0.85
240
235
215
110
50
PNP
TYP
0.100
0.75
0.85
130
150
150
120
55
SYMBOL
TEST CONDITIONS
I =50mA, I =5.0mA
MIN
0.65
90
100
100
70
MAX
0.200
0.85
UNITS
V
)
V
V
V
♦
CE(SAT
C
B
V
V
h
I =10mA, I =1.0mA
C B
BE(SAT
)
I =50mA, I =5.0mA
0.95
BE(SAT
C
B
)
V
=1.0V, I =0.1mA
C
♦
♦
FE
CE
h
FE
V
=1.0V, I =1.0mA
C
FE
CE
h
V
=1.0V, I =10mA
300
CE
C
♦
h
V
=1.0V, I =50mA
FE
CE
C
h
V
V
=1.0V, I =100mA
30
300
FE
CE
CE
C
f
=20V, I =10mA, f=100MHz
MHz
pF
pF
kΩ
-4
X10
T
C
C
C
V
V
V
V
V
V
V
=5.0V, I =0, f=1.0MHz
4.0
8.0
12
10
400
60
ob
ib
CB
BE
CE
CE
CE
CE
CE
E
=0.5V, I =0, f=1.0MHz
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
1.0
0.1
100
1.0
ie
re
fe
C
=10V, I =1.0mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
C
=10V, I =1.0mA, f=1.0kHz
μS
dB
oe
C
NF
=5.0V, I =100μA, R =1.0KΩ,
4.0
C
S
f=10Hz to 15.7kHz
t
t
t
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
35
35
200
50
ns
ns
ns
ns
d
r
s
f
CC
CC
CC
CC
C
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
C
=3.0V, I =10mA, I =I =1.0mA
C
C
B1 B2
B1 B2
=3.0V, I =10mA, I =I =1.0mA
♦ Enhanced specification
SOT-883L - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1 (5-MAY 2008)
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