CBCP69 [CENTRAL]
SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS; 硅互补小信号晶体管
| 型号： | CBCP69 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
| 文件： | 总3页 (文件大小：738K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CBCP68 NPN
CBCP69 PNP
Semiconductor Corp.
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
DESCRIPTION:
TheCENTRALSEMICONDUCTORCBCP68,
CBCP69 types are complementary silicon
transistormanufacturedby theepitaxialplanar
process, epoxy molded in a surface mount
package, designed for applications requiring
high current capability.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-Peak
Base Current
V
25
20
V
V
V
A
A
mA
mA
W
CES
V
V
CEO
EBO
5.0
1.0
2.0
100
200
2.0
I
I
I
I
C
CM
B
BM
Base Current-Peak
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
-65 to +150
62.5
C
C/W
J stg
Q
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
10
1.0
10
UNITS
mA
mA
mA
V
I
I
I
V
V
V
=25V
=25V, T =150 C
=5.0V
CBO
CBO
EBO
CBO
CEO
EBO
CE(SAT)
CB
CB
EB
o
A
BV
BV
BV
V
V
V
h
I =10mA
25
20
5.0
C
I =10mA
V
V
V
V
C
I =1.0mA
E
I =1.0A, I =100mA
0.5
1.0
C
B
V
=10V, I =5.0mA
0.6
BE(ON)
BE(ON)
CE
CE
CE
C
V
V
=1.0V, I =1.0A
C
V
=10V, I =5.0mA
50
FE
C
66
SYMBOL
TEST CONDITIONS
MIN
85
60
TYP
MAX
375
UNITS
h
h
V
V
V
V
=1.0V, I =500mA
FE
FE
CE
CE
CE
CB
C
=1.0V, I =1.0A
C
f
C
=5.0V, I =10mA, f=20MHz
65
MHz
pF
T
C
=5.0V, I =0, F=450kHz
E
25
ob
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
R2
67
相关型号：
CBCX68-25BK
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CENTRAL
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