CBCX68 [CENTRAL]
SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS; 硅互补小信号晶体管
| 型号： | CBCX68 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CBCX68
CBCX69
Semiconductor Corp.
SILICON COMPLEMENTARY
DESCRIPTION:
SMALL SIGNAL TRANSISTORS
The CENTRAL SEMICONDUCTOR CBCX68,
CBCX69 types are complementary silicon
transistor manufactured by epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
high current capability.
SOT-89 CASE
MAXIMUM RATINGS (T =25°C)
A
SYMBOL
UNITS
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-Peak
Base Current
Base Current Peak
Power Dissipation
V
25
20
V
V
CES
CEO
EBO
V
V
5.0
1.0
2.0
100
200
1.2
V
I
A
C
I
A
CM
I
mA
mA
W
B
I
P
BM
D
Operating and Storage
Junction Temperature
Thermal Temperature
T ,T
stg
-65 to +150
104
°C
°C/W
J
Θ
JA
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
µA
µA
V
I
I
I
V
V
V
=25V
100
CBO
CBO
EBO
CB
CB
EB
=25V, T =150°C
A
=5.0V
10
BV
BV
BV
I =10µA
25
20
5.0
CBO
CEO
C
I =10mA
V
C
I =1.0µA
V
EBO
E
V
V
V
I =1.0A, I =100mA
0.5
1.0
V
CE(SAT)
BE(ON)
BE(ON)
FE
C
B
V
=10V,I =5.0mA
0.6
V
CE
CE
CE
CE
CE
CE
C
V
V
V
V
V
=1.0V, I =1.0A
V
C
h
h
h
=10V,I =500mA
50
85
60
65
C
=1.0,I =500mA
375
FE
C
=1.0V, I =1.0A
FE
T
C
f
=5.0V,I =10mA, f=20MHz
MHz
C
R4 ( 19-December 2001)
TM
CBCX68
CBCX69
Central
Semiconductor Corp.
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
MECHANICAL OUTLINE - SOT-89
A
E
B
G
F
H
1
2
3
C
J
K
R3
L
M
BOTTOM VIEW
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R4 ( 19-December 2001)
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