2N6035LEADFREE [CENTRAL]
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,;
| 型号： | 2N6035LEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, 局域网 开关 晶体管 |
| 文件： | 总2页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6034 2N6035 2N6036
2N6037 2N6038 2N6039
PNP
NPN
www.centralsemi.com
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6034, 2N6037
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
2N6034 2N6035 2N6036
C
SYMBOL 2N6037 2N6038 2N6039
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
V
V
V
40
40
60
60
5.0
4.0
8.0
100
40
1.5
80
80
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
CBO
CEO
EBO
I
C
I
CM
I
B
P
P
D
D
Power Dissipation (T =25°C)
A
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
83.3
3.12
J
stg
JA
JC
Θ
Θ
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
I
I
V
V
V
V
V
=Rated V
=Rated V
=Rated V
=Rated V
=5.0V
500
μA
CBO
CEV
CEV
CEO
EBO
CEO
CEO
CEO
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
CB
CE
CE
CE
EB
CBO
, V =1.5V
CEO BE
100
500
100
2.0
μA
μA
μA
mA
V
V
V
V
V
, V =1.5V, T =125°C
CEO BE
CEO
C
BV
BV
BV
V
V
V
V
h
h
h
I =100mA (2N6034, 2N6037)
40
60
80
C
I =100mA (2N6035, 2N6038)
C
I =100mA (2N6036, 2N6039)
C
I =2.0A, I =8.0mA
2.0
3.0
4.0
2.8
C
B
B
B
I =4.0A, I =40mA
C
I =4.0A, I =40mA
V
V
C
V
=3.0V, I =2.0A
CE
CE
CE
CE
CE
CB
CB
C
V
V
V
V
V
V
=3.0V, I =500mA
500
750
100
25
C
=3.0V, I =2.0A
15K
FE
FE
C
=3.0V, I =4.0A
C
f
C
C
=10V, I =750mA, f=1.0MHz
MHz
pF
pF
T
C
=10V, I =0, f=100kHz (PNP)
200
100
ob
ob
E
=10V, I =0, f=100kHz (NPN)
E
R1 (12-March 2014)
2N6034 2N6035 2N6036
2N6037 2N6038 2N6039
PNP
NPN
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R1 (12-March 2014)
www.centralsemi.com
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