2N6036 [ONSEMI]
Plastic Darlington Complementary Silicon Power Transistors; 塑料达林顿互补硅功率晶体管
| 型号： | 2N6036 |
| 厂家： | 
ONSEMI |
| 描述： | Plastic Darlington Complementary Silicon Power Transistors |
| 文件： | 总8页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor)
PNP
2N6035
Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general–purpose amplifier and low–speed
switching applications.
*
*
2N6036
NPN
2N6038
2N6039
• High DC Current Gain —
h
= 2000 (Typ) @ I = 2.0 Adc
FE
• Collector–Emitter Sustaining Voltage — @ 100 mAdc
= 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc
C
*ON Semiconductor Preferred Device
V
CEO(sus)
DARLINGTON
4–AMPERE
(Min) — 2N6036, 2N6039
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
• Forward Biased Second Breakdown Current Capability
I
= 1.5 Adc @ 25 Vdc
S/b
• Monolithic Construction with Built–In Base–Emitter Resistors to
Limit Leakage Multiplication
E
40 WATTS
• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic
Package
MAXIMUM RATINGS (1)
2N6035
2N6038
2N6036
2N6039
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
60
60
80
80
STYLE 1:
V
CB
EB
PIN 1. EMITTER
2. COLLECTOR
3. BASE
3
V
5.0
2
1
Collector Current — Continuous
Peak
I
C
4.0
8.0
CASE 77–09
TO–225AA TYPE
Base Current
I
100
mAdc
B
Total Power Dissipation @ T = 25_C
P
40
0.32
Watts
C
D
Derate above 25_C
W/_C
Total Power Dissipation @ T = 25_C
P
1.5
0.012
Watts
A
D
Derate above 25_C
Operating and Storage Junction
Temperature Range
T , T
stg
–65 to +150
_C
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
3.12
83.3
Unit
_C/W
_C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(1) Indicates JEDEC Registered Data.
θ
JC
θ
JA
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 10
2N6035/D
2N6035 2N6036 2N6038 2N6039
T
A
T
C
4.0 40
3.0 30
2.0 20
1.0 10
T
C
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
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2
2N6035 2N6036 2N6038 2N6039
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
V
Vdc
CEO(sus)
2N6035, 2N6038
2N6036, 2N6039
60
80
—
—
C
B
Collector–Cutoff Current
I
µA
µA
CEO
(V
CE
(V
CE
= 60 Vdc, I = 0)
2N6035, 2N6038
2N6036, 2N6039
—
—
100
100
B
= 80 Vdc, I = 0)
B
Collector–Cutoff Current
I
CEX
(V
CE
(V
CE
(V
CE
(V
CE
= 60 Vdc, V
= 80 Vdc, V
= 60 Vdc, V
= 80 Vdc, V
= 1.5 Vdc)
= 1.5 Vdc)
2N6035, 2N6038
2N6036, 2N6039
2N6035, 2N6038
2N6036, 2N6039
—
—
—
—
100
100
500
500
BE(off)
BE(off)
BE(off)
BE(off)
= 1.5 Vdc, T = 125_C)
C
C
= 1.5 Vdc, T = 125_C)
Collector–Cutoff Current
I
mAdc
CBO
(V
CB
(V
CB
= 60 Vdc, I = 0)
2N6035, 2N6038
2N6036, 2N6039
—
—
0.5
0.5
E
= 80 Vdc, I = 0)
E
Emitter–Cutoff Current (V
ON CHARACTERISTICS
DC Current Gain
= 5.0 Vdc, I = 0)
I
EBO
—
2.0
mAdc
—
BE
C
h
FE
(I = 0.5 Adc, V
= 3.0 Vdc)
= 3.0 Vdc)
= 3.0 Vdc)
500
750
100
—
15,000
—
C
CE
CE
CE
(I = 2.0 Adc, V
C
(I = 4.0 Adc, V
C
Collector–Emitter Saturation Voltage
(I = 2.0 Adc, I = 8.0 mAdc)
V
Vdc
CE(sat)
—
—
2.0
3.0
C
B
(I = 4.0 Adc, I = 40 mAdc)
C
B
Base–Emitter Saturation Voltage (I = 4.0 Adc, I = 40 mAdc)
V
—
—
4.0
2.8
Vdc
Vdc
C
B
BE(sat)
Base–Emitter On Voltage (I = 2.0 Adc, V
C
= 3.0 Vdc)
V
BE(on)
CE
DYNAMIC CHARACTERISTICS
Small–Signal Current–Gain (I = 0.75 Adc, V
C
= 10 Vdc, f = 1.0 MHz)
|h
fe
|
25
—
—
CE
Output Capacitance
C
pF
ob
(V
CB
= 10 Vdc, I = 0, f = 0.1 MHz)
2N6035, 2N6036
2N6038, 2N6039
—
—
200
100
E
*Indicates JEDEC Registered Data.
4.0
2.0
V
V
CC
I /I = 250
= 30 V
I
= I
CC
-ā30 V
B1 B2
R
D
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
MUST BE FAST RECOVERY TYPE, eg:
B
t
s
T = 25°C
J
C B
1
ă1N5825 USED ABOVE I ≈ 100 mA
ăMSD6100 USED BELOW I ≈ 100 mA
B
R
C
SCOPE
B
TUT
V
t
2
approx
+ā8.0 V
R
B
f
1.0
0.8
D
1
≈ 8.0 k
51
≈ 60
t
r
0
0.6
0.4
V
1
approx
-12 V
+ā4.0 V
25 µs
t
@ V
= 0
d
BE(off)
for t and t , D is disconnected
and V = 0, R and R are varied
to obtain desired test currents.
d
r
1
B
PNP
NPN
2
C
t , t ≤ 10 ns
r f
DUTY CYCLE = 1.0%
0.2
0.04 0.06
For NPN test circuit, reverse diode,
polarities and input pulses.
0.1
0.2
0.4 0.6
1.0
2.0
4.0
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
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3
2N6035 2N6036 2N6038 2N6039
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
P
(pk)
θ
θ
(t) = r(t) θ
0.05
JC
JC
JC
= 3.12°C/W MAX
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.02
t
1
0.01
READ TIME AT t
1
t
2
0.03
0.02
SINGLE PULSE
T
- T = P
θ
(pk) JC
(t)
J(pk)
C
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
t, TIME (ms)
5.0
10
20 30
50
100
200 300 500
1000
Figure 4. Thermal Response
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2N6035 2N6036 2N6038 2N6039
ACTIVE–REGION SAFE–OPERATING AREA
1.0
7.0
1.0
7.0
100 µs
100 µs
5.0Ăms
5.0
5.0Ăms
1.0Ăms
5.0
1.0Ăms
3.0
2.0
3.0
dc
dc
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
2.0
T
T
J
= 150°C
J
1.0
0.7
1.0
0.7
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED
0.5
@ T = 25°C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
@ T = 25°C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
0.3
0.2
0.3
0.2
2N6036
2N6035
2N6039
2N6038
0.1
5.0
0.1
5.0
7.0
10
20
30
50
70
100
7.0
10
20
30
50
70
100
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 5. 2N6035, 2N6036
Figure 6. 2N6038, 2N6039
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I – V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
= 25°C
C
C
CE
100
70
50
The data of Figures 5 and 6 is based on T
= 150_C;
J(pk)
C
ob
T
is variable depending on conditions. Second breakdown
C
30
20
C
ib
pulse limits are valid for duty cycles to 10% provided T
J(pk)
may be calculated from the data in Figure 4.
< 150_C. T
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
PNP
NPN
10
0.04 0.06 0.1 0.2 0.4 0.6 1.0
2.0 4.0 6.0 10
20
40
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitance
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5
2N6035 2N6036 2N6038 2N6039
PNP
NPN
2N6035, 2N6036
2N6038, 2N6039
6.0 k
6.0 k
V
CE
= 3.0 V
V
CE
= 3.0 V
T
= 125°C
T = 125°C
J
C
4.0 k
3.0 k
4.0 k
3.0 k
25°C
25°C
2.0 k
2.0 k
-ā55°C
-ā55°C
1.0 k
800
1.0 k
800
600
600
400
300
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
100
4.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 8. DC Current Gain
3.4
3.0
3.4
T
= 25°C
T
J
= 25°C
J
3.0
2.6
2.2
1.8
1.4
I
=
0.5 A
C
I
=
0.5 A
C
2.6
2.2
1.0 A
4.0 A
2.0 A
1.0 A
2.0 A
4.0 A
1.8
1.4
1.0
0.6
1.0
0.6
0.1 0.2
0.5
1.0 2.0
5.0 10
20
51000
0.1 0.2 0.5
1.0 2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 9. Collector Saturation Region
2.2
1.8
1.4
1.0
0.6
0.2
2.2
T
= 25°C
T = 25°C
J
J
1.8
1.4
1.0
0.6
0.2
V
@ I /I = 250
C B
BE(sat)
V
@ I /I = 250
BE(sat) C B
V
@ V = 3.0 V
CE
V
BE
@ V = 3.0 V
CE
BE
V @ I /I = 250
CE(sat) C B
V
CE(sat)
@ I /I = 250
C B
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0 4.0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 10. “On” Voltages
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2N6035 2N6036 2N6038 2N6039
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
C
U
Q
M
INCHES
DIM MIN MAX
MILLIMETERS
–A–
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2 3
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
K
M
Q
R
S
U
V
TYP
TYP
_
_
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
---
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
---
R
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
B
0.25 (0.010)
A
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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2N6035 2N6036 2N6038 2N6039
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2N6035/D
相关型号：
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Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
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