2N3789 [CENTRAL]
PNP POWER TRANSISTORS JEDEC TO-3 CASE; PNP功率晶体管JEDEC TO-3 CASE
| 型号： | 2N3789 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | PNP POWER TRANSISTORS JEDEC TO-3 CASE |
| 文件： | 总2页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
2N3789
2N3790
2N3791
2N3792
PNP POWER TRANSISTORS
JEDEC TO-3 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar
process and designed for medium speed switching and amplifier applications.
MAXIMUM RATINGS (T =25°C unless otherwise noted)
C
2N3789
2N3791
60
2N3790
2N3792
80
SYMBOL
UNITS
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
CBO
V
60
80
V
V
A
A
W
CEO
V
7.0
10
EBO
I
C
Base Current
I
4.0
150
B
Power Dissipation
P
D
Operating and Storage
Junction Temperature
T ,T
-65 to +200
1.17
°C
J stg
Thermal Resistance
Θ
°C/W
JC
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
C
2N3789
2N3791
2N3790
2N3792
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX UNITS
I
V
V
V
= Rated V
= Rated V
=7.0V
, V =1.5V
1.0
5.0
5.0
1.0
5.0
5.0
mA
mA
mA
V
CEV
CE
CE
EB
CEO EB
I
, V =1.5V, T =150°C
CEO EB
CEV
C
I
EBO
BV
I =200mA
60
80
CEO
C
V
I =4.0A, I =400mA (2N3789, 2N3790)
1.0
1.0
2.0
1.8
4.0
90
1.0
1.0
2.0
1.8
4.0
90
V
CE(SAT)
C
B
V
I =5.0A, I =500mA (2N3791, 2N3792)
V
CE(SAT)
C
B
V
V
=2.0V, I =5.0A (2N3789, 2N3790)
V
BE(ON)
CE
CE
CE
CE
CE
CE
CE
CE
C
V
V
V
V
V
V
V
V
=2.0V, I =5.0A (2N3791, 2N3792)
C
V
BE(ON)
V
=4.0V, I =10A
V
BE(ON)
C
h
=2.0V, I =1.0A (2N3789, 2N3790)
C
25
50
15
30
4.0
25
50
15
30
4.0
FE
h
=2.0V, I =1.0A (2N3791, 2N3792)
180
180
FE
C
h
=2.0V, I =3.0A (2N3789, 2N3790)
C
FE
h
=2.0V, I =3.0A (2N3791, 2N3792)
FE
C
f
=10V, I =500mA, f=1.0MHz
C
MHz
T
(SEE REVERSE SIDE)
R1
2N3789 SERIES
PNP POWER TRANSISTORS
TO-3 PACKAGE - MECHANICAL OUTLINE
A
DIMENSIONS
INCHES MILLIMETERS
MIN MAX MIN MAX
B
SYMBOL
A
1.516 1.573 38.50 39.96
0.748 0.875 19.00 22.23
E
B (DIA)
C
C
D
E
0.250 0.450
0.433 0.516 11.00 13.10
0.054 0.065
0.035 0.045
6.35
11.43
1.38
0.90
1.65
1.15
D
F
F
G
H
J
1.177 1.197 29.90 30.40
0.650 0.681 16.50 17.30
0.420 0.440 10.67 11.18
G
K
0.205 0.225
0.151 0.172
0.984 1.050 25.00 26.67
5.21
3.84
5.72
4.36
L (DIA)
H
M
TO-3 (REV: R2)
L
2
1
K
J
M
R2
相关型号：
2N3790LEADFREE
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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