2N3790 [COMSET]
EPITAXIAL-BASE NPN - PNP; 外延基NPN - PNP
| 型号： | 2N3790 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | EPITAXIAL-BASE NPN - PNP |
| 文件： | 总5页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3713/2N3714/2N3715/2N3716 - NPN
2N3789/2N3790/2N3791/2N3792 - PNP
The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN
power transistor in Jedec TO-3 metal case. They are inteded for use in power
linear and switching applications. The complementary PNP
types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
2N3789
2N3791
2N3713
2N3715
2N3790
2N3792
2N3714
2N3716
2N3789
2N3791
2N3713
2N3715
2N3790
2N3792
2N3714
2N3716
2N3789
2N3790
2N3791
2N3792
2N3713
2N3714
2N3715
2N3716
80
Collector-BaseVoltage
Collector-Emitter Voltage
Emitter-Base Voltage
IE = 0
VCBO
V
100
60
IB = 0
VCEO
V
V
80
VEBO
IC = 0
7.0
COMSET SEMICONDUCTORS
1/5
2N3713/2N3714/2N3715/2N3716 - NPN
2N3789/2N3790/2N3791/2N3792 - PNP
Symbol
Ratings
Value
Unit
2N3789
2N3790
2N3791
2N3792
2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N3713
2N3714
2N3715
2N3716
Collector Current
Base Current
IC
10
A
IB
4.0
150
A
Watts
W/°C
Total Device Dissipation
@ TC = 25°
PD
Junction Temperature
Storage Temperature
TJ
TS
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
2N3789
2N3790
2N3791
2N3792
2N3713
2N3714
2N3715
2N3716
Thermal Resistance, Junction to Case
(Max)
RthJC
1.17
°C/W
COMSET SEMICONDUCTORS
2/5
2N3713/2N3714/2N3715/2N3716 - NPN
2N3789/2N3790/2N3791/2N3792 - PNP
ELETRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
VCEO(SUS)
Ratings
Min Typ Mx Unit
2N3789
2N3791
2N3713
2N3715
2N3790
2N3792
2N3714
2N3716
2N3789
2N3791
2N3713
2N3715
2N3790
2N3792
2N3714
2N3716
2N3789
2N3791
2N3713
2N3715
2N3790
2N3792
2N3714
2N3716
2N3789
2N3791
2N3713
2N3715
2N3790
2N3792
2N3714
2N3716
2N3789
2N3790
2N3791
2N3792
2N3713
2N3714
2N3715
2N3716
60
80
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Sustaining
Voltage
IC=200 mA, IB=0 (1)
V
-
VCE=30 V, IB=0
0.7
0.7
1.0
1.0
10
10
Collector-Emitter Current
Collector Cutoff Current
Emitter Cutoff Current
mA
ICEO
ICEV
IEBO
VCE=40 V, IB=0
-
VCE=80 V, VEB=-1.5 V
-
VCE=100 V, VEB=-1.5 V, TC =
150°C
-
mA
VCE=60 V, VEB=-1.5 V, TC =
150°C
-
VCE=80 V, VEB(off)=-1.5 V, TC =
150°C
-
VBE=7.0 V, IC=0
-
-
5.0
mA
COMSET SEMICONDUCTORS
3/5
2N3713/2N3714/2N3715/2N3716 - NPN
2N3789/2N3790/2N3791/2N3792 - PNP
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
2N3713
2N3714
2N3789
2N3790
2N3715
2N3716
2N3791
2N3792
2N3713
2N3714
2N3789
2N3790
2N3715
2N3716
2N3791
2N3792
2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N3713
2N3714
2N3791
2N3792
2N3715
2N3716
2N3789
2N3790
2N3713
2N3714
2N3789
2N3790
2N3715
2N3716
2N3791
2N3792
25
-
90
IC=1.0 A, VCE=2.0 V
50
50
-
-
150
180
15
30
-
-
-
-
DC Current Gain (1) (2)
-
IC=3.0 A, VCE=2.0 V
hFE
IC=10 A, VCE=4.0 V
5.0
-
-
-
-
1.0
IC=5.0 A, IB=0.5 A
Collector-Emitter saturation
Voltage (1) (2)
V
V
VCE(SAT)
-
-
-
-
0.8
1.0
IC=4.0 Adc, IB=0.5 Adc
-
-
-
-
2.0
1.5
Base-Emitter Saturation
Voltage (1) (2)
IC=5.0 Adc, IB=0.5 Adc
VBE(SAT)
2N3713
-
-
-
-
2.0
1.8
2N3714
IC=5.0 Adc, VCE=2.0 Vdc
IC=10 A, VCE=4.0 V
2N3715
2N3716
2N3713
2N3714
2N3715
2N3716
Base-Emitter Voltage (1) (2)
V
VBE
-
-
4.0
COMSET SEMICONDUCTORS
4/5
2N3713/2N3714/2N3715/2N3716 - NPN
2N3789/2N3790/2N3791/2N3792 - PNP
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
2N3713
2N3714
2N3715
2N3716
VCE=10 V, IC=0.5 A, f=1.0 kHz
Small Signal Current Gain
25
-
250
-
hfe
2N3713
2N3714
2N3715
2N3716
VCE=10 V, IC=0.5 A, f=1.0 MHz
Small Signal
4
-
4
-
|hfe|
(1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(2) These parameters are measured with voltage sensing contacts separate from the current carrying
contacts
For PNP types current and voltage values are negative.
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
1,004
1,53
1,18
0,68
0,43
0,46
0,34
0,6
A
B
C
D
E
G
H
L
25,51
38,93
30,12
17,25
10,89
11,62
8,54
1,55
19,47
1
M
N
P
0,77
0,04
0,16
4,06
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
5/5
相关型号：
2N3790LEADFREE
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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