CSD1306D [CDIL]

NPN SILICON PLANAR EPITAXIAL TRANSISTOR; NPN硅平面外延型晶体管
CSD1306D
型号: CSD1306D
厂家: Continental Device India Limited    Continental Device India Limited
描述:

NPN SILICON PLANAR EPITAXIAL TRANSISTOR
NPN硅平面外延型晶体管

晶体 晶体管 局域网
文件: 总3页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IS/ISO 9002  
Lic# QSC/L-000019.3  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
NPN SILICON PLANAR EPITAXIAL TRANSISTOR  
CSD1306 (SAW)  
PIN CONFIGURATION (NPN)  
1 = BASE  
SOT-23  
2 = EMITTER  
Formed SMD Package  
3 = COLLECTOR  
3
1
2
Marking  
CSD1306E=06  
ABSOLUTE MAXIMUM RATINGS  
VALUE  
30  
DESCRIPTION  
SYMBOL  
VCBO  
UNITS  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
V
V
VCEO  
15  
VEBO  
IC  
5
V
700  
1
Collector Current Continuous  
Collector Current Peak  
Power Dissipation @ Ta=25ºC  
mA  
A
ICP  
PD  
200  
mW  
Operating and Storage Junction  
Temperature Range  
Tj, Tstg  
- 55 to +150  
ºC  
Electrical Characterstics (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
VCBO  
CONDITIONS  
IC=10mA, IE=0  
IC=10mA, IB=0  
MIN  
30  
15  
5
TYP  
MAX  
UNIT  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Cut off Current  
Emitter Cut off Current  
Base Emitter On Voltage  
VCEO  
V
VEBO  
ICBO  
IE=1mA, IC=0  
VCB=20V, IE=0  
VEB=5V, IC=0  
V
mA  
mA  
V
1.0  
1.0  
1.0  
IEBO  
VBE (on)  
VCE =1V, IC=150mA  
IC=500mA, IB=50mA  
VCE =1V, IC=150mA  
Collector Emitter Saturation  
Voltage  
VCE (sat)  
0.5  
V
DC Current Gain  
hFE  
fT  
250  
1200  
VCE=1V, IC=150mA,  
VCB=10V, f=1MHz  
Transition Frequency  
Output Capacitance  
Input Capacitance  
250  
MHz  
pF  
Cob  
Cib  
10  
VEB=0.5V, IC=0, f=1MHz  
pF  
100  
hFE Classification  
D : 250 - 500  
E : 300 - 800  
F : 600 -1200  
CSD1306ERev_3 300103E  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  
CSD1306 (SAW)  
SOT-23  
Formed SMD Package  
SOT-23 Formed SMD Package  
SOT-23 Package Reel Information  
Reel Specifications for W Packing (13") and 7"  
2.50  
14.4  
MAX  
±0.02  
0.60  
± 0.02  
0.60  
±0.025  
1.30  
7.9 – 10.9  
9.2±0.5  
ø100.0±0.5 / ø54.5 ±0.5  
ø329.2±0.5 / 178 ±0.5  
1
cL  
3
180  
or  
330  
2
+0.5  
–0.2  
ø13.0  
3°  
3°  
ø20.2 MIN  
± 0.02  
0.60  
± 0.02  
0.60  
7°  
1.30  
2.0±0.5  
0.08  
0.08  
All dimensions in mm  
330 / 180 mm – Antistatic Coated Plastic Reel  
DETAIL X  
PARTING LINE  
RO.08  
8mm Tape  
Size of Reel  
8mm Tape  
Size of Reel  
NOTES:  
R0.08  
330 mm (13")  
10,000 Pcs  
180 mm (7")  
3,000 Pcs  
±4"  
6°  
No. of Devices  
1. The bandolier of 330 mm reel contains at least 10,000 devices.  
2. The bandolier of 180 mm reel contains at least 3,000 devices.  
3. No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel.  
15 empty compartments for 180 mm reel.  
±3"  
5°  
0.21  
7°  
±0.05  
4. Three consecutive empty places might be found provided this gap is followed by 6  
consecutive devices.  
5. The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm).  
In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end  
of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.  
Tape Specification for SOT-23 Surface Mount Device  
±0.1  
4.0  
±0.05  
1.55  
±0.05  
2.0  
±0.1  
4.0  
±0.1  
1.75  
±0.05  
3.5  
+0.3  
- 0.1  
8.0  
±0.10  
2.77  
5.75  
MAX  
±0.1  
1.22  
±0.05  
1.0  
1.6  
MAX  
3.15  
All dimensions in mm  
Direction of Unreeling  
Packing Detail  
PACKAGE  
STANDARD PACK  
INNER CARTON BOX  
OUTER CARTON BOX  
Details  
Net Weight/Qty  
136 gm/3K pcs  
Size  
Qty  
Size  
Qty  
Gr Wt  
SOT-23 T&R  
3K/reel  
3" x 7.5" x 7.5"  
9" x 9" x 9"  
415 gm/10K pcs 13" x 13" x 0.5"  
12 K  
51 K  
10 K  
17" x 15" x 13.5"  
19" x 19" x 19"  
17" x 15" x 13.5"  
192 K  
408 K  
300 K  
12 kgs  
28 kgs  
16 kgs  
10K/reel  
CSD1306ERev_3 300103E  
Continental Device India Limited  
Data Sheet  
Page 2 of 3  
Notes  
CSD1306 (SAW)  
SOT-23  
Formed SMD Package  
Disclaimer  
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited  
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as  
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and  
on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for  
inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or  
use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not  
designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual  
Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or  
applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).  
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.  
CDIL is a registered Trademark of  
Continental Device India Limited  
C-120 Naraina Industrial Area, New Delhi 110 028, India.  
Telephone + 91-11-2579 6150 Fax + 91-11-2579 9569, 2579 5290  
e-mail sales@cdil.com  
www.cdil.com, www.cdilsemi.com  
CSD1306ERev_3 300103E  
Data Sheet  
Page 3 of 3  
Continental Device India Limited  

相关型号:

CSD1306E

NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CDIL

CSD1306E

SOT-23 - Power Transistor and Darlingtons
RECTRON

CSD1306F

NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CDIL

CSD13201W10

N-Channel NexFET Power MOSFET
TI

CSD13201W10_15

N-Channel NexFET Power MOSFET
TI

CSD13202Q2

12V N-Channel NexFET Power MOSFETs
TI

CSD13302W

采用 1mm x 1mm WLP 封装的单路、17.1mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
TI

CSD13302WT

采用 1mm x 1mm WLP 封装的单路、17.1mΩ、12V、N 沟道 NexFET™ 功率 MOSFET | YZB | 4 | -55 to 150
TI

CSD13303W1015

N-Channel NexFET™ Power MOSFET
TI

CSD13306W

采用 1mm x 1.5mm WLP 封装的单路、10.2mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
TI

CSD13306WT

采用 1mm x 1.5mm WLP 封装的单路、10.2mΩ、12V、N 沟道 NexFET™ 功率 MOSFET | YZC | 6 | -55 to 150
TI

CSD13380F3

采用 0.6mm x 0.7mm LGA 封装、具有栅极 ESD 保护的单路、76mΩ、12V、N 沟道 NexFET™ 功率 MOSFET
TI