1N645UR-1 [CDI-DIODE]
SILICON RECTIFIER; 硅整流
| 型号： | 1N645UR-1 |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N645UR-1
CDLL645
• AVAILABLE IN JAN, JANTX AND JANTXV
PER MIL-PRF-19500/240
• SILICON RECTIFIER
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25ºC
150 mA @ 150ºC
Derating: 2.0mA/°C between 25ºC to 150ºC
6.0mA/°C between 150ºC to 175ºC
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
D
F
1.60
0.41
3.30
1.70 0.063 0.067
0.55 0.016 0.022
3.70 .130 .146
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
G
G1
S
2.54 REF.
0.03 MIN.
.100 REF.
.001 MIN.
V
V
I
V
F
@400mA
CAP
@ V
=4V
RSM
RWM
FSM
TYPE
T
T
=1/120 s
P
R
=25ºC
A
V
V
A
V
F
P
(pk)
(pk)
DC
FIGURE 1
CDLL, 1N645UR-1
270
225
5
0.8 -1.0
2.0
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
I
at V
I
at V
I
at V
=25ºC
A
R1
T
RWM R2
RWM
R3
T
RSM
TYPE
=25ºC
T
= 150°C
A
A
LEAD FINISH: Tin / Lead
µA
0.05
µA
µA
CDLL, 1N645UR-1
25
50
THERMAL RESISTANCE: (R
):
OJEC
100 ˚C/W maximum
THERMAL IMPEDANCE: (Z
˚C/W maximum
): 35
JX
O
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
IN645UR-1 and CDLL645
1000
100
10
1
0.1
.3
.4.5
.6
.7
.8
.9
1.0
1.1
1.2
1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
1000
100
10
1
0.1
.01
.001
NOTE :
All temperatures shown on graphs are
junction temperatures
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
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