1N645UR-1E3 [MICROSEMI]
Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 1N645UR-1E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2 二极管 |
| 文件： | 总1页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FEATURES
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1N645UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-
19500/240
1N645UR-1
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•
•
•
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SILICON RECTIFIER
METALLURGICALLY BONDED
HERMETICALLY SEALED
DOUBLE PLUG CONSTRUCTION
LSO VAILABLE S &
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 8.3mS:
Total Power Dissipation:
Operating Current:
-65°C to +175°C
-65°C to +175°C
5.0A
500mW
400mA, TA= +25°C
Operating Current:
Derating Factor:
150mA, TA= +150°C
2mA/°C above +25°C
Derating Factor:
D.C. Reverse Voltage (VRWM):
6mA/°C above +150°C
225V
DC ELECTRICAL CHARACTERISTICS
VF
IR
Ambient
(°C)
Ambient
(°C)
IF
mA
Min
V
Max
V
VR
V (dc)
Min
µA
Max
µA
25
150
-55
400
400
400
0.80
0.70
-
1.00
0.95
1.20
25
25
150
225
270(ac)
225
-
-
-
0.050
50
25
DESIGN DATA
Case: Hermetically sealed glass package per MIL-
PRF-19500/240 DO-213AA outline
Lead Material: Copper clad steel
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol
Min
Max
Lead Finish: Tin/Lead
Capacitance @ VR = 4V
pF
Thermal Resistance (RθJEC): 100°C/W maximum
Thermal Impedance (ZθJX): 35°C/W maximum
Marking: Blue body coat
-
20
Polarity: Cathode end is banded
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