3N170 [CALOGIC]
N-Channel Enhancement Mode MOSFET Switch; N沟道增强型MOSFET开关
| 型号： | 3N170 |
| 厂家： | 
CALOGIC, LLC |
| 描述： | N-Channel Enhancement Mode MOSFET Switch |
| 文件： | 总2页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel Enhancement
Mode MOSFET Switch
CORPORATION
3N170 / 3N171
FEATURES
HANDLING PRECAUTIONS
Low Switching Voltages
Fast Switching Times
Low Drain-Source Resistance
Low Reverse Transfer Capacitance
MOS field-effect transistors have extremely high input
resistance and can be damaged by the accumulation of
excess static charge. To avoid possible damage to the device
while wiring, testing, or in actual operation, follow the
procedures outlined below.
•
•
•
•
PIN CONFIGURATION
1. To avoid the build-up of static charge, the leads of the
devices should remain shorted together with a metal ring
except when being tested or used.
2. Avoid unnecessary handling. Pick up devices by the case
instead of the leads.
TO-72
3. Do not insert or remove devices from circuits with the
power on as transient voltages may cause permanent
damage to the devices.
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/oC
C,B
D
S
G
1003
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
3N170-71
X3N170-71 Sorted Chips in Carriers
Hermetic TO-72
-55oC to +150oC
-55oC to +150oC
3N170 / 3N171
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) Substrate connected to source.
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ID = 10µA, VGS = 0
GS = ±35V, VDS = 0
VGS = 35V, VDS = 0, TA = 125oC
DS = 10V, VGS = 0
BVDSS
Drain-Source Breakdown Voltage
25
V
V
±10
100
10
IGSS
Gate Leakage Current
pA
nA
V
IDSS
Zero-Gate-Voltage Drain Current
Gate-Source Threshold Voltage
TA = 125oC
1.0
2.0
3.0
µA
3N170
3N171
1.0
1.5
10
VGS(th)
V
VDS = 10V, ID = 10µA
ID(on)
"ON" Drain Current
mA
V
VGS = 10V, VDS = 10V
VDS(on)
rds(on)
Drain-Source "ON" Voltage
Drain-Source ON Resistance
Forward Transfer Admittance
Reverse Transfer Capacitance (Note 1)
Input Capacitance (Note 1)
Drain-Substrate Capacitance (Note 1)
Turn-On Delay Time (Note 1)
Rise Time (Note 1)
2.0
ID = 10mA, VGS = 10V
VGS = 10V, ID = 0, f = 1kHz
VDS = 10V, ID = 2.0mA, f = 1kHz
VDS = 0, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
VD(SUB) = 10V, f = 1MHz
200
Ω
| Yfs
Crss
Ciss
|
1000
µS
1.3
5.0
5.0
3.0
10
pF
ns
Cd(sub)
td(on)
tr
VDD = 10V, ID(on) = 10mA,
VGS(on) = 10V, VGS(off) = 0,
R
G = 50Ω
td(off)
tf
Turn-Off Delay Time (Note 1)
Fall Time (Note 1)
3.0
15
NOTE 1: For design reference only, not 100% tested.
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