3N170-TO-72-4L-ROHS [Linear]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | 3N170-TO-72-4L-ROHS |
| 厂家： | 
Linear |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总2页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3N170, 3N171
N-CHANNEL MOSFET
ENHANCEMENT MODE
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171
LOW DRAIN TO SOURCE RESISTANCE
rds(on) ≤ 200Ω
FAST SWITCHING
td(on) ≤ 3.0ns
3N170, 171
3N170, 171
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
SOT-143
TOP VIEW
-65 to +150 °C
-55 to +135 °C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
300mW
30mA
Drain to Source
Maximum Voltages
Drain to Gate
±35V
25V
Drain to Source
Gate to Source
±35V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated)
SYMBOL
BVDSS
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
25
ID = 10µA, VGS = 0V
VDS(on)
2.0
2.0
3.0
10
ID = 10mA, VGS = 10V
V
3N170
3N171
1.0
1.5
Gate to Source
Threshold Voltage
VGS(th)
VDS = 10V, ID = 10µA
IGSS
IDSS
ID(on)
gfs
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
pA
nA
mA
µS
Ω
VGS = -35V, VDS = 0V
10
VDS = 10V, VGS = 0V
10
VGS = 10V, VDS = 10V
Forward Transconductance
1000
VDS = 10V, ID = 2.0mA, f = 1.0kHz
VGS = 10V, ID = 100µA, f = 1.0kHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 10V, VGS = 0V, f = 1.0MHz
VDB = 10V, f = 1.0MHz
rds(on)
Crss
Ciss
Cdb
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
200
1.3
5.0
5.0
pF
Drain to Body Capacitance
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201139 07/12/13 Rev#A15 ECN# 3N170_3N171
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
Turn On Delay Time
Turn On Rise Time
Turn Off Delay Time
Turn Off Fall Time
MIN TYP MAX UNITS CONDITIONS
td(on)
tr
td(off)
tf
3.0
VDD = 10V, IDD(on) = 10mA,
VGS(on) = 10V, VGS(off) = 0V
RG = 50Ω
10
3.0
15
ns
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201139 07/12/13 Rev#A15 ECN# 3N170_3N171
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