2N4416 [CALOGIC]
N-Channel JFET High Frequency Amplifier; N沟道JFET高频放大器
| 型号： | 2N4416 |
| 厂家： | 
CALOGIC, LLC |
| 描述： | N-Channel JFET High Frequency Amplifier |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-Channel JFET
High Frequency Amplifier
CORPORATION
2N4416 / 2N4416A / PN4416
FEATURES
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise noted)
Low Noise
Low Feedback Capacitance
Low Output Capacitance
High Transconductance
•
Gate-Source or Gate-Drain Voltage
•
2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
2N4416A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range
•
•
High Power Gain
•
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC +150oC
Operating Temperature Range
PIN CONFIGURATION
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . -65oC to +200oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +135oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25oC
TO-72
TO-92
2N4416/2N4416A . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/oC
PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
C
G
G
D
S
S
D
ORDERING INFORMATION
CJ1
Part
Package
Temperature Range
2N4416
2N4416A
PN4416
Hermetic TO-72
Hermetic TO-72
Plastic TO-92
-55oC to +135oC
-55oC to +135oC
-55oC to +135oC
-55oC to +135oC
X2N4416 Sorted Chips in Carriers
2N4416 / 2N4416A / PN4416
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
-0.1
-0.1
UNITS
nA
TEST CONDITIONS
V
GS = -20V, VDS = 0
IGSS
Gate Reverse Current
µA
T
A = 150oC
2N4416/PN4416
2N4416A
-30
-35
BVGSS
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
IG = -1µA, VDS = 0
V
2N4416/PN4416
2N4416A
-6
-6
VGS(off)
VDS = 15V, ID = 1nA
IG = 1mA, VDS = 0
-2.5
VGS(f)
IDSS
gfs
Gate-Source Forward Voltage
1
V
Drain Current at Zero Gate Voltage
5
15
7500
50
0.8
4
mA
µS
µs
f = 1kHz
f = 1MHz
Common-Source Forward Transconductance
Common-Source Output Conductance
4500
V
V
DS = 15V,
GS = 0
gos
Crss
Ciss
Coss
Common-Source Reverse Transfer Capacitance (Note 1)
Common-Source Input Capacitance (Note 1)
Common-Source Input Capacitance (Note 1)
pF
pF
2
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
100MHz
400MHz
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN
MAX
MIN
MAX
giss
biss
Common-Source Input Conductance
Common-Source Input Susceptance
100
1000
2500
10,000
Common-Source Output
Conductance
goss
boss
gfs
75
100
µS
VDS = 15V, VGS = 0 (Note 1)
Common-Source Output Susceptance
1000
4000
Common-Source Forward
Transconductance
4000
10
Gps
NF
Common-Source Power Gain
Noise Figure (Note 1)
18
VDS = 15V, ID = 5mA (Note 1)
DS = 15V, ID = 5mA, RG = 1kΩ
dB
2
4
V
NOTE 1: For design reference only, not 100% tested.
相关型号：
2N4416A
SMALL SIGNAL N-CHANNEL J-FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES
SEME-LAB
2N4416A-E3
TRANSISTOR Si, SMALL SIGNAL, FET, TO-206AF, LEAD FREE, HERMETIC SEALED, TO-72, 4 PIN, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明