2N4416-TO-72-4L-ROHS [Linear]
Transistor,;
Linear 
2N/PN SST4416 2N4416A
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER
FEATURES
Replacement For SILICONIX 2N/SST4416 & 2N4416A
VERY LOW NOISE FIGURE (400 MHz)
EXCEPTIONAL GAIN (400 MHz)
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
4 dB
10 dB
2N SERIES
PN SERIES* SST SERIES
SOT-23
TOP VIEW
1
D
Storage Temperature
-55 to +150 °C
-55 to +135 °C
3
G
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
2
S
300mW
10mA
Gate Current
Maximum Voltages
Gate to Drain or Gate to Source 2N4416
Gate to Drain or Gate to Source 2N4416A
-30V
-35V
*Optional Package For 2N4416
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
2N/PN/SST4416 -30
Gate to Source
Breakdown Voltage
BVGSS
IG = -1µA, VDS = 0V
VDS = 15V, ID = 1nA
2N4416A
2N/PN/SST4416
2N4416A
-35
V
-6
-6
Gate to Source
Cutoff Voltage
VGS(off)
IDSS
-2.5
5
Gate to Source Saturation Current
15
mA
nA
VDS = 15V, VGS = 0V
VGS = -20V, VDS = 0V
VGS = -15V, VDS = 0V
2N
PN/SST
-0.1
-1.0
7500
100
0.8
4
IGSS
Gate Leakage Current
gfs
gos
Forward Transconductance
Output Conductance
4000
µS
pF
VDS = 15V, VGS = 0V, f = 1kHz
Ciss
Crss
Coss
en
Input Capacitance2
Reverse Transfer Capacitance2
Output Capacitance2
VDS = 15V, VGS = 0V, f = 1MHz
2
Equivalent Input Noise Voltage
6
nV/√Hz VDS = 10V, VGS = 0V, f = 1kHz
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201133 06/19/13 Rev#A9 ECN# 2N4416
HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
100 MHz
400 MHz
SYMBOL
CHARACTERISTIC
UNITS CONDITIONS
MIN MAX MIN MAX
giss
biss
goss
boss
Gfs
Input Conductance2
Input Susceptance2
Output Conductance2
Output Susceptance2
Forward Transconductance2
Power Gain2
100
2500
75
1000
10000
100
µS
dB
VDS = 15V, VGS = 0V
1000
4000
4000
10
Gps
NF
18
VDS = 15V, ID = 5mA
Noise Figure2
2
4
VDS = 15V, ID = 5mA, RG = 1kΩ
SOT-23
0.89
1.03
0.37
0.51
1
1.78
2.05
2.80
3.04
3
2
1.20
1.40
0.89
1.12
2.10
2.64
0.085
0.180
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
*Dimensions in inches
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Not production tested, guaranteed by design.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201133 06/19/13 Rev#A9 ECN# 2N4416
相关型号：
2N4416A
SMALL SIGNAL N-CHANNEL J-FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES
SEME-LAB
2N4416A-E3
TRANSISTOR Si, SMALL SIGNAL, FET, TO-206AF, LEAD FREE, HERMETIC SEALED, TO-72, 4 PIN, FET General Purpose Small Signal
VISHAY
2N4416A-TO-72
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, ROHS COMPLIANT, METAL PACKAGE-4
Linear
©2020 ICPDF网 联系我们和版权申明