TISP7082F3L [BOURNS]
Silicon Surge Protector, 82V V(BO) Max, 7.1A, PLASTIC, SIP-3;
| 型号： | TISP7082F3L |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 82V V(BO) Max, 7.1A, PLASTIC, SIP-3 触发装置 硅浪涌保护器 光电二极管 |
| 文件： | 总16页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T
TISP7072F3,TISP7082F3
N
A
I
L
P
S
M
N
O
E
O
I
L
C
B
S
S
A
R
H
L
E
I
o
V
A
R
V
*
LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL
THYRISTOR OVERVOLTAGE PROTECTORS
A
TISP70xxF3 (LV) Overvoltage Protector Series
Patented Ion-Implanted Breakdown Region
- Precise DC and Dynamic Voltages
D Package (Top View)
G
T
NC
NC
R
1
8
7
6
5
V
V
DRM
V
(BO)
V
Device
2
NU
NU
G
3
4
‘7072F3
‘7082F3
58
66
72
82
Planar Passivated Junctions
Low Off-State Current..................................<10 µA
NC - No internal connection.
NU - Non-usable; no external electrical connection should be
made to these pins.
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
Specified ratings require connection of pins 5 and 8.
I
TSP
A
Waveshape
Standard
SL Package (Top View)
2/10
8/20
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
85
80
65
1
2
3
T
G
R
10/160
FCC Part 68
ITU-T K.20/21
FCC Part 68
10/700
50
MD1XAB
10/560
45
40
10/1000
GR-1089-CORE
Device Symbol
R
T
............................................. UL Recognized Component
Description
The TISP7xxxF3 series are 3-point overvoltage protectors
designed for protecting against metallic (differential mode) and
simultaneous longitudinal (common mode) surges. Each terminal
pair has the same voltage limiting values and surge current
capability. This terminal pair surge capability ensures that the
protector can meet the simultaneous longitudinal surge
requirement which is typically twice the metallic surge
requirement.
SD7XAB
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
Each terminal pair has a symmetrical voltage-triggered
thyristor characteristic. Overvoltages are initially clipped by
breakdown clamping until the voltage rises to the breakover
level, which causes the device to crowbar into a low-voltage on
state. This low-voltage on state causes the current resulting from
the overvoltage to be safely diverted through the device.
How To Order
For Standard
For Lead Free
Termination Finish Termination Finish
Device
Package
Carrier
Order As
Order As
Tape and Reel TISP70xxF3DR
TISP70xxF3DR-S
TISP70xxF3D-S
TISP70xxF3SL-S
TISP70xxF3 D, Small-Outline
TISP70xxF3 SL, Single-in-Line
Tube
Tube
TISP70xxF3D
TISP70xxF3SL
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Description (continued)
The high crowbar holding current prevents d.c. latchup as the diverted current subsides. These protectors are guaranteed to voltage limit and
withstand the listed lightning surges in both polarities.
These low voltage devices are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair. Nine similar
devices with working voltages from 100 V to 275 V are detailed in the TISP7125F3 thru TISP7380F3 data sheet.
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)
A
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0 °C < T < 70 °C
A
‘7072F3
‘7082F3
V
58
66
V
DRM
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
240
85
45
80
65
60
50
50
50
45
40
I
A
PPSM
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0 °C < T < 70 °C (see Notes 1 and 3)
A
50 Hz, 1 s
D Package
SL Package
4.3
7.1
I
A
TSM
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
di /dt
250
A/µs
°C
T
Junction temperature
T
-65 to +150
-65 to +150
J
Storage temperature range
T
°C
stg
NOTES: 1. Initially, the TISP® device must be in thermal equilibrium at the specified T . The surge may be repeated after the TISP® device
A
returns to its initial conditions. The rated current values may be applied singly either to the R to G or to the T to G or to the T
.
to R terminals.
the total G terminal
Additionally, both R to G and T to G may have their rated current values applied simultaneously (in this case
current will be twice the above rated current values).
2. See Thermal Information for derated I values 0 °C < T < 70 °C and Applications Information for details on wave shapes.
PPSM
A
3. Above 70 °C, derate I
linearly to zero at 150 °C lead temperature.
TSM
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Electrical Characteristics for all Terminal Pairs, T = 25 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
, 0 °C < T < 70 °C
Min
Typ
Max
Unit
Repetitive peak off-
state current
I
V
= V
±10
µA
DRM
D
DRM
A
‘7072F3
‘7082F3
±72
±82
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 Ω
SOURCE
V
V
(BO)
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
Impulse breakover
voltage
‘7072F3
‘7082F3
±90
±100
V
(BO)
(BO)
I
Breakover current
On-state voltage
Holding current
dv/dt = ±250 V/ms,
R
= 300 Ω
±0.1
±0.8
±5
A
V
A
SOURCE
V
I = ±5 A, t = 100 µs
T
T
W
I
I = ±5 A, di/dt = - /+30 mA/ms
±0.15
±5
H
T
Critical rate of rise of
off-state voltage
Off-state current
dv/dt
Linear voltage ramp, Maximum ramp value < 0.85V
kV/µs
µA
DRM
I
V
= ±50 V
±10
69
73
66
56
33
D
D
f = 1 MHz, V = 1 V rms, V = 0
53
56
51
43
25
d
D
f = 1 MHz, V = 1 V rms, V = -1 V
d
D
f = 1 MHz, V = 1 V rms, V = -2 V
d
D
f = 1 MHz, V = 1 V rms, V = -5 V
d
D
C
Off-state capacitance
pF
off
f = 1 MHz, V = 1 V rms, V = -50 V
d
D
f = 1 MHz, V = 1 V rms, V
d
= 0
29
37
DTR
(see Note 4)
NOTE 4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias V , are
D
for the R-G and T-G terminals only. The last capacitance value, with bias V
, is for the T-R terminals.
DTR
Thermal Characteristics
Parameter
Test Conditions
Min
D Package
Typ
Max
160
135
Unit
°
P
= 0.8 W, T = 25 C
tot
A
Rθ
Junction to free air thermal resistance
°
C/W
JA
2
SL Package
5 cm , FR4 PCB
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
Switching
ITSP
Characteristic
ITSM
V(BO)
I(BO)
IH
IDRM
ID
VDRM
VD
+v
-v
ID
VD
VDRM
IDRM
IH
I(BO)
V(BO)
ITSM
Quadrant III
ITSP
Switching
Characteristic
PMXXAAA
-i
Figure 1. Voltage-Current Characteristic for T and R Terminals
T and G and R and G Measurements are Referenced to the G Terminal
T and R Measurements are Referenced to the R Terminal
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and G, or T and G Terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC7LAE
TC7LAC
100
10
1
1.2
1.1
1.0
0.9
V(BO)
VD = -50 V
0-1
V(BR)M
VD = 50 V
V(BR)
Normalized to V(BR)
I(BR) = 1 mA and 25 °C
Positive Polarity
0-01
0-001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - ° C
TJ - Junction Temperature -
°C
Figure 2.
Figure 3.
OFF-STATE CURRENT
vs
ON-STATE VOLTAGE
NORMALIZED BREAKDOWN VOLTAGES
vs
TC7LAL
JUNCTION TEMPERATURE
TC7LAF
100
Positive Polarity
1.2
1.1
1.0
0.9
10
V(BO)
Normalized to V(BR)
I(BR) = 1 mA and 25
V(BR)
150 °C
°C
25
°C
Negative Polarity
V(BR)M
-25
°C
-40
1
0
25
50
75
100 125 150
1
2
1 3
4
5
6
7
8 9 0
T - Junction Temperature -
VT - On-State Voltage - V
°C
J
Figure 4.
Figure 5.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and G, or T and G Terminals
ON-STATE CURRENT
vs
HOLDING CURRENT & BREAKOVER CURRENT
vs
ON-STATE VOLTAGE
JUNCTION TEMPERATURE
TC7LAM
TC7LAH
100
10
1
1.0
0.9
0.8
Negative Polarity
0.7
0.6
+I(BO)
0.5
0.4
-I(BO)
0.3
0.2
IH
°C
150
°C
°C
25
-40
0.1
1
2
3
4
5
6
7
8 9 10
-25
0
25
50
75
100 125 150
VT - On-State Voltage - V
TJ - Junction Temperature - °C
Figure 6.
Figure 7.
NORMALIZED BREAKOVER VOLTAGE
vs
SURGE CURRENT
vs
RATE OF RISE PRINCIPLE CURRENT
DECAY TIME
TC7LAA
TC7LAU
1.5
1.4
1.3
1.2
1.1
1.0
1000
Negative
100
Positive
10
2
0-001
0-01
0-1
1
10
100
10
100
1000
Decay Time - µs
di/dt - Rate of Rise of Principle Current - A/µs
Figure 8.
Figure 9.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
OFF-STATE CURRENT
vs
NORMALIZED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
TC7LAG
TC7LAD
100
10
1.2
1.1
1.0
0.9
V(BR)M
1
0-1
0-01
V(BO)
V(BR)
0-001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature -
°C
Figure 10.
Figure 11.
HOLDING CURRENT & BREAKOVER CURRENT
vs
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
JUNCTION TEMPERATURE
TC7LAK
TC7LAJ
1.0
0.9
0.8
100
0.7
0.6
0.5
0.4
I(BO)
10
0.3
0.2
IH
°C
150
°C
25
-40
°C
1
1
0.1
-25
0
25
50
75
100 125 150
2
3
4
5
6
7
8 9 10
TJ - Junction Temperature -
VT - On-State Voltage - V
°C
Figure 12.
Figure 13.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and T Terminals
NORMALIZED BREAKOVER VOLTAGE
vs.
RATE OF RISE OF PRINCIPLE CURRENT
TC7LAV
1.5
1.4
1.3
1.2
1.1
1.0
0-001
0-01
0-1
1
10
100
µs
di/dt - Rate of Rise of Principle Current - A/
Figure 14.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Thermal Information
MAXIMUM NON-RECURRING 50 Hz CURRENT
vs.
CURRENT DURATION
THERMAL RESPONSE
TI7LAA
TI7MAB
VGEN = 250 Vrms
GEN = 10 to 150 Ω
100
10
1
R
SL Package
10
D Package
SL Package
D Package
10
1
0-1
1
100
1000
0.0001 0.001 0.01
0.1
1
10
100 1000
t - Current Duration - s
t - Power Pulse Duration - s
Figure 15.
Figure 16.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
Thermal Information
Non-Repetitive Peak On-state Pulse Derated Values for 0 °C ≤ T ≤ 70 °C
A
Rating
Symbol
Value
Unit
Non-repetitive peak on-state pulse current, 0 °C < T < 70 °C (see Notes 5, 6 and 7)
A
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
130
80
45
75
55
50
50
50
50
40
40
I
A
PPSM
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Initially, the TISP ® device must be in thermal equilibrium at the specified T . The impulse may be repeated after the TISP ® device
A
NOTES: 5.
returns to its initial conditions. The rated current values may be applied either to the R to G or to the T to G or to the T to R
terminals. Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total
G terminal current will be twice the above rated current values).
6. See Applications Information for details on wave shapes.
7. Above 70 °C, derate I
linearly to zero at 150 °C lead temperature.
PPSM
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are three terminal overvoltage protectors. They limit the voltage between three points in the circuit. Typically, this would be the
two line conductors and protective ground (Figure 17).
Th3
Th1
Th2
Figure 17. MULTI-POINT PROTECTION
In Figure 17, protective functions Th2 and Th3 limit the maximum voltage between each conductor and ground to their respective ±V
(BO)
values. Protective function Th1 limits the maximum voltage between the two conductors to its ±V
value.
(BO)
Lightning Surge
Wave Shape Notation
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an
exponential decay. Wave shapes are classified in terms of rise time in microseconds and a decay time in microseconds to 50% of the
maximum amplitude. The notation used for the wave shape is rise time/decay time, without the microseconds quantity and the “/” between the
two values has no mathematical significance. A 50 A, 5/310 waveform would have a peak current value of 50 A, a rise time of 5 µs and a decay
time of 310 µs. The TISP® surge current graph comprehends the wave shapes of commonly used surges.
Generators
There are three categories of surge generator type: single wave shape, combination wave shape and circuit defined. Single wave shape
generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g., 10/1000 open circuit voltage and
short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current
(e.g., 1.2/50 open circuit voltage and 8/20 short circuit current). Circuit specified generators usually equate to a combination generator,
although typically only the open circuit voltage wave shape is referenced (e.g., a 10/700 open circuit voltage generator typically produces a 5/
310 short circuit current). If the combination or circuit defined generators operate into a finite resistance, the wave shape produced is
intermediate between the open circuit and short circuit values.
ITU-T 10/700 Generator
This circuit defined generator is specified in many standards. The descriptions and values are not consistent between standards and it is
important to realize that it is always the same generator being used.
Figure 18 shows the 10/700 generator circuit defined in ITU-T recommendation K.20 (10/96) “Resistibility of telecommunication switching
equipment to overvoltages and overcurrents”. The basic generator comprises of:
Capacitor C , charged to voltage V , which is the energy storage element.
1
C
Switch SW to discharge the capacitor into the output shaping network.
Shunt resistor R , series resistor R and shunt capacitor C form the output shaping network.
1
2
2
Series feed resistor R to connect to one line conductor for single surge.
3
Series feed resistor R to connect to the other line conductor for dual surging.
4
In the normal single surge equipment test configuration, the unsurged line is grounded. This is shown by the dotted lines in the top drawing of
Figure 18. However, doing this at device test places one terminal pair in parallel with another terminal pair. To check the individual terminal
pairs of the TISP7xxxF3, without any paralleled operation, the unsurged terminal is left unconnected.
With the generator output open circuit, when SW closes, C discharges through R . The decay time constant will be C R , or
1
1
1
1
20 x 50 = 1000 µs. For the 50 % voltage decay time, the time constant needs to be multiplied by 0.697, giving 0.697 x 1000 = 697 µs which is
rounded to 700 µs.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Lightning Surge (continued)
ITU-T 10/700 Generator (continued)
VC
2.8 kV
R2
15 Ω
R3
25 Ω
70 A
5/310
SW
R
T
T
R
R
T
G
R1
50 Ω
C1
20 µF
C2
200 nF
70 A
5/310
G
G
T AND G
TEST
R AND G
TEST
R AND T
TEST
10/700 GENERATOR - SINGLE TERMINAL PAIR TEST
95 A
4/250
R4
25 Ω
VC
5.2 kV
95 A
4/250
R2
15 Ω
R3
25 Ω
SW
T
R
C1
20 µF
R1
50 Ω
C2
200 nF
190 A
4/250
G
DUAL
10/700 GENERATOR - DUAL TERMINAL PAIR TEST
T AND G,
R AND G
TEST
Figure 18.
The output rise time is controlled by the time constant of R and C , which is 15 x 200 = 3000 ns or 3 µs. Virtual voltage rise times are given
2
2
by straight line extrapolation through the 30 % and 90 % points of the voltage waveform to zero and 100 %. Mathematically, this is equivalent to
3.24 times the time constant, which gives 3.24 x 3 = 9.73 which is rounded to 10 µs. Thus, the open circuit voltage rises in 10 µs and decays in
700 µs, giving the 10/700 generator its name.
When the overvoltage protector switches, it effectively shorts the generator output via the series 25 Ω resistor. Two short circuit conditions
need to be considered: single output using R only (top circuit of Figure 18) and dual output using R and R (bottom circuit of Figure 18).
3
3
4
For the single test, the series combination of R and R (15 + 25 = 40 Ω) is in shunt with R . This lowers the discharge resistance from 50 Ω to
2
3
1
22.2 Ω, giving a discharge time constant of 444 µs and a 50% current decay time of 309.7 µs, which is rounded to 310 µs.
For the rise time, R and R are in parallel, reducing the effective source resistance from 15 Ω to 9.38 Ω, giving a time constant of 1.88 µs.
2
3
Virtual current rise times are given by straight line extrapolation through the 10 % and 90 % points of the current waveform to zero and 100 %.
Mathematically, this is equivalent to 2.75 times the time constant, which gives 2.75 x 1.88 = 5.15, which is rounded to 5 µs. Thus, the short
circuit current rises in 5 µs and decays in 310 µs, giving the 5/ 310 wave shape.
The series resistance from C to the output is 40 Ω giving an output conductance of 25 A/kV. For each 1 kV of capacitor charge voltage, 25 A
1
of output current will result.
For the dual test, the series combination of R plus R and R in parallel (15 + 12.5 = 27.5 Ω) is in shunt with R . This lowers the discharge
2
3
4
1
resistance from 50 Ω to 17.7 Ω, giving a discharge time constant of 355 µs and a 50 % current decay time of 247 µs, which is rounded to
250 µs.
For the rise time, R , R and R are in parallel, reducing the effective source resistance from 15 Ω to 6.82 Ω, giving a time constant of 1.36 µs,
2
3
4
which gives a current rise time of 2.75 x 1.36 = 3.75, which is rounded to 4 µs. Thus, the short circuit current rises in 4 µs and decays in 250
µs, giving the 4/250 wave shape.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Lightning Surge (continued)
ITU-T 10/700 Generator (continued)
The series resistance from C to an individual output is 2 x 27.5 = 55 Ω, giving an output conductance of 18 A/kV. For each 1 kV of capacitor
1
charge voltage, 18 A of output current will result.
At 25 °C, these protectors are rated at 70 A for the single terminal pair condition and 95 A for the dual condition (R and G terminals and T and
G terminals). In terms of generator voltage, this gives a maximum generator setting of 70 x 40 = 2.8 kV for the single condition and 2 x 95 x
27.5 = 5.2 kV for the dual condition. The higher generator voltage setting for the dual condition is due to the current waveform decay being
shorter at 250 µs compared to the 310 µs value of the single condition.
Other ITU-T recommendations use the 10/700 generator: K.17 (11/88) “Tests on power-fed repeaters using solid-state devices in order to
check the arrangements for protection from external interference” and K.21(10/96) “Resistibility of subscriber’s terminal to overvoltages and
overcurrents“, K.30 (03/93) “Positive temperature coefficient (PTC) thermistors”.
Several IEC publications use the 10/700 generator; common ones are IEC 6100-4-5 (03/95) “Electromagnetic compatibility (EMC) - Part 4:
Testing and measurement techniques - Section 5: Surge immunity test” and IEC 60950 (04/99) “Safety of information technology equipment”.
The IEC 60950 10/700 generator is carried through into other “950” derivatives. Europe is harmonized by CENELEC (Comité Européen de
Normalization Electro-technique) under EN 60950 (included in the Low Voltage Directive, CE mark). US has UL (Underwriters Laboratories)
1950 and Canada CSA (Canadian Standards Authority) C22.2 No. 950.
FCC Part 68 “Connection of terminal equipment to the telephone network” (47 CFR 68) uses the 10/700 generator for Type B surge testing.
Part 68 defines the open circuit voltage wave shape as 9/720 and the short circuit current wave shape as 5/320 for a single output. The current
wave shape in the dual (longitudinal) test condition is not defined, but it can be assumed to be 4/250.
Several VDE publications use the 10/700 generator; for example: VDE 0878 Part 200 (12/92) “Electromagnetic compatibility of information
technology equipment and telecommunications equipment; Immunity of analogue subscriber equipment”.
1.2/50 Generators
The 1.2/50 open circuit voltage and 8/20 short circuit current combination generator is defined in IEC 61000-4-5 (03/95) “Electromagnetic
compatibility (EMC) - Part 4: Testing and measurement techniques - Section 5: Surge immunity test”. This generator has a fictive output
resistance of 2 Ω, meaning that dividing the open circuit output voltage by the short circuit output current gives a value of 2 Ω (500 A/kV).
The combination generator has three testing configurations; directly applied for testing between equipment a.c. supply connections, applied
via an external 10 Ω resistor for testing between the a.c. supply connections and ground, and applied via an external 40 Ω resistor for testing
all other lines. For unshielded unsymmetrical data or signalling lines, the combination generator is applied via a 40 Ω resistor either between
lines or line to ground. For unshielded symmetrical telecommunication lines, the combination generator is applied to all lines via a resistor of n
x 40 Ω, where n is the number of conductors and the maximum value of external feed resistance is 250 Ω. Thus, for four conductors, n = 4 and
the series resistance is 4 x 40 = 160 Ω. For ten conductors, the resistance cannot be 10 x 40 = 400 Ω and must be 250 Ω. The combination
generator is used for short distance lines, long distance lines are tested with the 10/700 generator.
When the combination generator is used with a 40 Ω or more, external resistor, the current wave shape is not 8/20, but becomes closer to the
open circuit voltage wave shape of 1.2/50. For example, a commercial generator when used with 40 Ω produced an 1.4/50 wave shape.
The wave shapes of 1.2/50 and 8/20 occur in other generators as well. British Telecommunication has a combination generator with 1.2/50
voltage and 8/20 current wave shapes, but it has a fictitious resistance of 1 Ω. ITU-T recommendation K.22 “Overvoltage resistibility of
equipment connected to an ISDN T/S BUS” (05/95) has a 1.2/50 generator option using only resistive and capacitive elements, Figure 19.
The K.22 generator produces a 1.4/53 open circuit voltage wave. Using 25 Ω output resistors gives a single short circuit current output wave
shape of 0.8/18 with 26 A/kV and a dual of 0.6/13 with 20 A/kV. These current wave shapes are often rounded to 1/20 and 0.8/14. There are 8/
20 short circuit current defined generators. These are usually very high current, 10 kA or more and are used for testing a.c. protectors, primary
protection modules and some Gas Discharge Tubes.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Lightning Surge (continued)
1.2/50 Generators (continued)
C4
8 nF
VC
1 kV
R2
13 Ω
C3
8 nF
SW
NOTE: SOME STANDARDS
REPLACE OUTPUT
CAPACITORS WITH
25 RESISTORS
Ω
R1
76 Ω
C1
1 µF
C2
30 nF
K.22 1.2/50 GENERATOR
Figure 19.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms.
The table in this section shows some common test values.
Manufacturers are being increasingly required to design in protection coordination. This means that each protector is operated at its design
level and currents are diverted through the appropriate protector, e.g.,the primary level current through the primary protector and lower levels
of current may be diverted through the secondary or inherent equipment protection. Without coordination, primary level currents could pass
through the equipment only designed to pass secondary level currents. To ensure coordination happens with fixed voltage protectors, some
resistance is normally used between the primary and secondary protection (R1a and R1b, Figure 21). The values given in this data sheet apply
to a 400 V (d.c. sparkover) gas discharge tube primary protector and the appropriate test voltage when the equipment is tested with a primary
protector.
Voltage
Peak Voltage
Peak Current
Current
Waveform
µs
TISP7xxxF3
25 °C Rating
A
Series
Resistance
Ω
Coordination
Resistance
Ω (Min.)
Standard
Setting
V
Va lue
A
Waveform
µs
2500
1000
1500
800
2/10
2 x 500
2 x 100
200
2/10
10/1000
10/160
10/560
5/320 †
5/320 †
4/250
2 x 190
2 x 45
110
50
GR-1089-CORE
12
NA
10/1000
10/160
10/560
9/720 †
(SINGLE)
(DUAL)
0.5/700
10/700
(SINGLE)
(SINGLE)
(DUAL)
6
8
100
FCC Part 68
(March 1998)
NA
1000
1500
1500
1500
1000
1500
4000
4000
25
70
70
2 x 95
70
37.5
2 x 27
37.5
25
37.5
100
0
I 31-24
0.2/310
5/310
5/310
5/310
4/250
0
0
0
17
0
NA
NA
NA
6
70
70
70
2 x 95
ITU-T K.20/K.21
2 x 72
6
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.2110/700 impulse generator
NA = Not Applicable, primary protection removed or not specified.
If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the
protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following
calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated
current. The impulse generator’s fictive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the
minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a
temperature range. By using the derated waveform values from the thermal information section, the appropriate series resistor value can be
calculated for ambient temperatures in the range of 0 °C to 70 °C.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Protection Voltage
The protection voltage, (V
), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the
(BO)
rate of current rise, di/dt, when the TISP® device is clamping the voltage in its breakdown region. The V
value under surge conditions can
(BO)
(250 V/ms) value by the normalized increase at the surge’s di/dt. An estimate of the di/dt can
be estimated by multiplying the 50 Hz rate V
be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
(BO)
As an example, the ITU-T recommendation K.21 1.5 kV, 10/700 surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the
initial dv/dt is three times higher, being 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional
series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In
practice, the measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope resistance of the TISP®
breakdown region.
Capacitance
Off-State Capacitance
The off-state capacitance of a TISP® device is sensitive to junction temperature, T , and the bias voltage, comprising of the dc voltage, V ,
J
D
and the ac voltage, V . All the capacitance values in this data sheet are measured with an ac voltage of 1 Vrms. When V >> V , the capaci-
d
D
d
tance value is independent on the value of V . Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the
d
effective capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of 10 cm could create a circuit
resonance with the device capacitance in the region of 80 MHz.
Longitudinal Balance
Figure 20 shows a three terminal TISP® device with its equivalent “delta” capacitance. Each capacitance, C , C
and C , is the true
TR
TG RG
terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T,
then C >C . Capacitance C is equivalent to a capacitance of C in parallel with the capacitive difference of (C - C ). The line
TG RG RG TG RG
TG
capacitive unbalance is due to (C
- C
) and the capacitance shunting the line is C
+C
/2.
TG RG TR
RG
Figure 20.
All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance
effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is
included.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxF3 (LV) Overvoltage Protector Series
APPLICATIONS INFORMATION
Typical Circuits
TIP
WIRE
F1a
F1b
R1a
Th3
Th1
GDTa
GDTb
PROTECTED
EQUIPMENT
Th2
R1b
AI7XBP
RING
WIRE
TISP7xxxF3
Figure 21. Protection Module
R1a
R1b
Th3
SIGNAL
Th1
Th2
AI7XBM
TISP7150F3
D.C.
Figure 22. ISDN Protection
OVER-
CURRENT
PROTECTION
SLIC
PROTECTION
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
TIP
WIRE
S3a
R1a
Th4
Th5
Th3
S1a
S2a
COORDI-
NATION
RESISTANCE
Th1
Th2
SLIC
R1b
RING
WIRE
S3b
TISP7xxxF3
TISP6xxxx,
TISPPBLx,
1/2 TISP6NTP2
S1b
S2b
VBAT
C1
220 nF
TEST
EQUIP-
MENT
RING
GENERATOR
AI7XBN
Figure 23. Line Card Ring/Test Protection
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关型号：
TISP7082F3P-S
Silicon Surge Protector, 82V V(BO) Max, 5.7A, MS-001BA, LEAD FREE, PLASTIC, D008, MS-001, DIP-8
BOURNS
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