TISP4A250H3BJR-S [BOURNS]
Silicon Surge Protector, 125V V(BO) Max, 60A, ROHS COMPLIANT, SMB, 2 PIN;
| 型号： | TISP4A250H3BJR-S |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | Silicon Surge Protector, 125V V(BO) Max, 60A, ROHS COMPLIANT, SMB, 2 PIN 触发装置 硅浪涌保护器 光电二极管 |
| 文件： | 总8页 (文件大小：530K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4A250H3BJ
ASYMMETRICAL-BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTOR
TISP4A250H3BJ Overvoltage Protector
RING Line Protection for:
— LCAS (Line Card Access Switch) such as Le75181,
Le75183 and Le75282
SMB Package (Top View)
Voltages Optimized for:
— Battery-Backed Ringing Circuits
1
2
(Ring)
(Ground)
Maximum Ringing a.c..................................................104 Vrms
Maximum Battery Voltage................................................. -52 V
Terminal typical application names
shown in parenthesis
VDRM
V
V(BO)
V
MD-SMB-006-a
Device Name
Device Symbol
+100
-200
+125
-250
TISP4A250H3BJ
(Ring)
Rated for International Surge Wave Shapes
IPPSM
Wave Shape
Standard
A
2/10
8/20
GR-1089-CORE
IEC 61000-4-5
TIA-968-A
500
300
250
200
160
100
10/160
10/700
10/560
10/1000
(Ground)
ITU-T K.20/21/45
TIA-968-A
SD-TISP4A-001-a
GR-1089-CORE
..........................................UL Recognized Component
How To Order
Device
Package
Carrier
Embossed Tape Reeled
Order As
Marking Code
Standard Quantity
TISP4A250H3BJ
SMB
TISP4A250H3BJR-S
4A250H
3000
Description
The TISP4A250H3BJ is an asymmetrical bidirectional overvoltage protector. It is designed to limit the peak voltages on the Ring line
terminal of the LCAS (Line Card Access Switch) such as Le75181, Le75183 and Le75282. The TISP4A250H3BJ must be connected
with bar-indexed terminal 1 to the protective Ground, and terminal 2 to the Ring conductor.
The TISP4A250H3BJ voltages are chosen to give adequate LCAS ring line terminal protection for all switch conditions. The most
potentially stressful condition is low level power cross when the LCAS switches are closed. Under this condition, the TISP4A250H3BJ
limits the voltage and corresponding LCAS dissipation until the LCAS thermal trip operates and opens the switches.
Under open-circuit ringing conditions, the line Ring conductor will have high peak voltages. For battery backed ringing, the Ring
conductor will have a larger peak negative voltage than positive, i.e. the peak voltages are asymmetric. The TISP4A250H3BJ has a
similar voltage asymmetry and will allow the maximum possible ringing voltage, while giving the most effective protection. On a connected
line, the Tip conductor will have much smaller voltage levels than the open-circuit Ring conductor values. Here a TISP4xxxH3BJ series
symmetrical voltage protector gives adequate protection.
Overvoltages are initially clipped by breakdown clamping. If sufficient current is available from the overvoltage, the breakdown voltage
will rise to the breakover level, which causes the device to switch into a low-voltage on-state condition. This switching action removes
the high voltage stress from the following circuitry and causes the current resulting from the overvoltage to be safely diverted through the
protector. The high holding (switch off) current prevents d.c. latchup as the diverted current subsides.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage (see Note 1)
Symbol
Value
Unit
+100
-200
VDRM
V
Non-repetitive peak impulse current (see Notes 2 and 3)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
500
300
250
200
200
160
100
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 µs current combination wave generator)
10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
5/320 µs (TIA-968-A, 9/720 µs voltage wave shape)
IPPSM
A
10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
55
60
20 ms, 50 Hz (full sine wave)
16.7 ms, 60 Hz (full sine wave)
1000 s, 50 Hz or 60 Hz a.c.
ITSM
A
2.2
Initial rate of rise of on-state currrent, exponential current ramp. Maximum ramp value < 200 A
Junction temperature
Storage temperature range
di T/dt
TJ
T
stg
400
A/µs
-40 to +150 °C
-65 to +150 °C
NOTES: 1. See Figure 6 for voltages at other temperatures.
2. Initially the device must be in thermal equilibrium with TJ = 25 °C.
3. The surge may be repeated after the device returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 5 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C.
Overload Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol Value
Unit
Maximum overload on-state current without open circuit, 50 Hz or 60 Hz a.c. (see note 5)
0.03 s
0.07 s
1.6 s
60
40
IT(OV)M
A rms
8
5.0 s
7
1000 s
2.2
NOTE: 5. Peak overload on-state current during a.c. power cross tests of GR-1089-CORE and UL 1950/60950. These electrical stress levels
may damage the TISP4A250H3BJ silicon die. After test, the pass criterion is either that the device is functional or, if it is faulty, that
it has a short-circuit fault mode. In the short-circuit fault mode, the following equipment is protected as the device is a permanent
short across the line. The equipment would be unprotected if an open-circuit fault mode developed.
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max Unit
TA = 25 °C
TA = 85 °C
±5
µA
IDRM
Repetitive peak off-state current
V D = VDRM
±±1
+±25
V
V(BO)
Breakover voltage
dv/dt = ±251 V/ms, R SOURCE = 311 Ω
-251
I(BO)
VT
Breakover current
On-state voltage
Holding current
dv/dt = ±251 V/ms, R SOURCE = 311 Ω
IT = ±5 A, tw = ±11 µs
±±51
±611 mA
±3
V
IH
IT = ±5 A, di/dt = ±31 mA/ms
±±51
±5
±611 mA
Critical rate of rise of
off-state voltage
Linear voltage ramp
Maximum ramp value < 1.85VDRM
dv/dt
CO
kV/µs
Off-state capacitance
f = ± MHz, V d = ± V rms
VD = 2 V
72
pF
Thermal Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Min Typ Max Unit
EIA/JESD5±-3 PCB, IT = ITSM(±111)
(see Note 6)
±±3
°C/W
R
Junction to ambien t thermal resistance
JA
265 mm x 2±1 mm populated line card,
4-layer PCB, IT = ITSM(±111)
51
NOTE: 6. EIA/JESD5±-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Parameter Measurement Information
+i
IPPSM
Quadrant I
Switching
Characteristic
ITSM
ITRM
IT
V(BO)
VT
I(BO)
IH
V(BR)
I(BR)
V(BR)M
IDRM
VDRM
VD
ID
+v
-v
ID
VD
VDRM
I(BR)
V(BR)
IDRM
V(BR)M
IH
I(BO)
VT
V(BO)
IT
ITRM
ITSM
Quadrant III
Switching
Characteristic
IPPSM
PM-TISP4Axxx-112-a
-i
Figure 1. Voltage-Current Characteristic for the Ring and Ground Terminals
All Measurements are Referenced to the Ground Terminal
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TCHAG
TC4HAF
100
1.10
1.05
1.00
0.95
VD
= 50 V
10
1
0·1
0·01
0·001
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
TJ - Junction Temperature - °C
Figure 2.
Figure 3.
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4HAD
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100 125 150
TJ - Junction Temperature - °C
Figure 4.
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Rating and Thermal Information
VDRM DERATING FACTOR
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
vs
CURRENT DURATION
MINIMUM AMBIENT TEMPERATURE
TI4HAC
TI4HADC
30
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
20
15
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
10
9
8
7
6
5
4
3
2
1.5
0·1
1
10
100
1000
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 6.
t - Current Duration - s
Figure 5.
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4A250H3BJ Overvoltage Protector
Applications Information
ATEST±
ARINGING±
SW SW
SW
Tip±
ALINE±
ASLIC±
FGND±
BSLIC±
Tip
B1250T
Telefuse™
TISP4125H3BJ
Ground
Ground
TISP4A250H3BJ
Ring
BLINE±
Ring±
SW
B1250T
SW SW
Telefuse™
BRINGING±
BTEST±
Battery
Monitor
Le79232
Dual SLIC
VBH
ATEST2
ARINGING2
SW
SW
SW
ALINE2
Tip2
ASLIC2
FGND2
BSLIC2
Tip
B1250T
Telefuse™
TISP4125H3BJ
Ground
Ground
Le75282
Dual LCAS
TISP4A250H3BJ
Ring
BLINE2
Ring2
SW
B1250T
Telefuse™
SW SW
P±'
P2'
BRINGING2
Switch
Control
Logic
Latch
P3'
LD±
BTEST2
LD2
TSD±
TSD2
OFF±
OFF2
AI-TISP4A-11±-a
Figure 7. Typical Application Circuit
NOVEMBER 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bourns Sales Offices
Region
Phone
Fax
The Americas:
Europe:
+1-951-781-5500
+41-41-7685555
+886-2-25624117
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Asia-Pacific:
Technical Assistance
Region
Phone
Fax
The Americas:
Europe:
+1-951-781-5500
+41-41-7685555
+886-2-25624117
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Asia-Pacific:
www.bourns.com
Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
COPYRIGHT© 2007, BOURNS, INC. LITHO IN U.S.A. e 05/07 TSP0705
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