TISP4500H3BJR-S [BOURNS]
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS; 双向晶闸管过电压保护
| 型号： | TISP4500H3BJR-S |
| 厂家： | 
BOURNS ELECTRONIC SOLUTIONS |
| 描述： | BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 文件： | 总6页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TISP4500H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4500H3BJ Overvoltage Protector
Non-Conductive During K.20/21/45 Power Contact Test
SMBJ Package (Top View)
- Off-State Voltage ................................................... >245 V rms
- For Controlled Environment ...............................0 °C to 70 °C
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
R 1
2 T
V
V
(BO)
DRM
MD-SMB-004-a
Device
V @0 °C
V @70 °C
TISP4500H3BJ
350
500
Device Symbol
Rated for International Surge Wave Shapes
T
I
PPSM
A
Wave Shape
Standard
2/10
500
230
200
100
GR-1089-CORE
GR-1089-CORE
10/250
10/700
10/1000
K.20/21/45
R
ITU-T
SD-TISP4xxx-001-a
GR-1089-CORE
.............................................. UL Recognized Component
Description
This device is designed to limit overvoltages on the telephone line to ±500 V over the temperature range. The minimum off-state voltage of
±350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives
protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations
K.20/21/45 230 V rms power cross test condition (test number 2.3.1).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the
diverted current subsides.
How To Order
For Standard
For Lead Free
Marking
Code Std. Qty.
Termination Finish Termination Finish
Order As
Order As
Device
Package
Carrier
TISP4500H3BJ SMB (DO-214AA)
Embossed Tape Reeled TISP4500H3BJR
TISP4500H3BJR-S
4500H3
3000
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
APRIL 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
Absolute Maximum Ratings, 0 °C ≤ T ≤ 70 °C (Unless Otherwise Noted)
A
Rating
Repetitive peak off-state voltage
Symbol
Value
Unit
VDRM
±350
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
500
230
200
100
2/10 (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
10/250 (Telcordia GR-1089-CORE, 10/250 µs voltage wave shape)
10/700 (ITU-T K.20/21/45, 5/310 µs current wave shape)
TA = 25 °C
TA = 25 °C
IPPSM
A
10/1000 (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
TA = 25 °C
Non-repetitive peak on-state current (see Notes 1, 2 and 3)
ITSM
±55
±2.0
A
50 Hz, 20 ms (1 cycle)
50 Hz, 1000 s
Junction temperature
TJ
-40 to +150
-65 to +150
°C
°C
Storage temperature range
Tstg
NOTES: 1. Initially the device must be in thermal equilibrium.
2. The surge may be repeated after the device returns to its initial conditions.
3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths.
Electrical Characteristics, 0 °C ≤ T ≤ 70 °C (Unless Otherwise Noted)
A
Parameter
Test Conditions
Min
Typ
Max
±5
Unit
µA
V
Repetitive peak off-
state current
T = 25 °C
A
I
V
= V
DRM
D DRM
T = 70 °C
±10
±500
A
V
Breakover voltage
dv/dt = ±250 V/ms,
R
= 300 Ω
(BO)
SOURCE
ITU-T recommendation K.44 (02/2000)
Figure A.3-1/K.44 10/700 impulse generator
Charge Voltage = ±4 kV
Impulse breakover
voltage
V
±500
±0.6
V
(BO)
I
Breakover current
Holding current
Off-state current
dv/dt = ±250 V/ms,
R
= 300 Ω
A
A
(BO)
SOURCE
I
I = ±5 A, di/dt = -/+30 mA/ms
±0.15
H
T
I
V
= ±50 V
T = 70 °C
±10
84
67
62
31
µA
D
D
A
f = 1 MHz, Vd = 1 V rms, V = 0
D
f = 1 MHz, Vd = 1 V rms, V = -1 V
D
C
Off-state capacitance
pF
off
f = 1 MHz, Vd = 1 V rms, V = -2 V
D
f = 1 MHz, Vd = 1 V rms, V = -50 V
D
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I = I
Min
Typ
Max
Unit
,
TSM(1000)
T
113
T = 25 °C, (seeNote 5)
A
RθJA Junction to free air thermal resistance
°C/W
265 mm x 210 mm populated line card,
4-layer PCB, I = I , T = 25 °C
50
T
TSM(1000)
A
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
APRIL 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
Parameter Measurement Information
+i
Quadrant I
Switching
IPPSM
Characteristic
ITSM
V(BO)
I(BO)
IH
V(BR)
I(BR)
VD
ID
+v
-v
ID
VD
I(BR)
V(BR)
IH
I(BO)
V(BO)
ITSM
Quadrant III
Switching
IPPSM
Characteristic
-i
PM4XAD
Figure 1. Voltage-current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
APRIL 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB Land Pattern
2.54
(.100)
2.40
(.094)
2.16
(.085)
MM
(INCHES)
DIMENSIONS ARE:
MDXXBIB
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
Symbolization Code
TISP4500H3BJ
4500H3
APRIL 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
MECHANICAL DATA
SMBJ (DO-214AA) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB
4.06 - 4.57
(.160 - .180)
3.30 - 3.94
(.130 - .155)
2
Index
Mark
(if needed)
MM
DIMENSIONS ARE:
(INCHES)
2.00 - 2.40
(.079 - .094)
1.90 - 2.10
(.075 - .083)
1.96 - 2.32
(.077 - .091)
0.10 - 0.20
(.004 - .008)
0.76 - 1.52
(.030 - .060)
5.21 - 5.59
(.205 - .220)
MDXXBHAB
APRIL 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
MECHANICAL DATA
Tape DImensions
SMB Package Single-Sprocket Tape
1.55 - 1.65
(.061 - .065)
3.90 - 4.10
(.154 - .161)
1.95 - 2.05
(.077 - .081)
0.40
(.016)
MAX.
1.65 - 1.85
(.065 - .073)
5.54 - 5.55
(.215 - .219)
11.70 - 12.30
(.461 - .484)
8.20
(.323)
MAX.
Cover
Tape
7.90 - 8.10
(.311 - .319)
1.50
(.059)
Ø
0 MIN.
MIN.
Carrier Tape
Embossment
4.50
(.177)
MAX.
Direction of Feed
Maximium component
rotation
20 °
Typical component
cavity center line
Index
Mark
Typical component
center line
MM
(INCHES)
DIMENSIONS ARE:
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in.) MIN. to 0.65 mm (.026 in.)
MDXXBJA
MAX. so that the component cannot rotate more than 20° within the determined cavity.
B. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter:
330 ± 3.0 mm (12.99 ± .118 in.)
(2.95 in.)
Reel hub diameter: 75 mm
MIN.
Reel axial hole:
13.0 ± 0.5 mm (.512 ± .020 in.)
C. 3000 devices are on a reel.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
APRIL 2001 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
相关型号：
©2020 ICPDF网 联系我们和版权申明