BCP030T [BEREX]
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP; 高效异质结功率FET芯片
| 型号： | BCP030T |
| 厂家： | 
BEREX CORPORATION |
| 描述： | HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
| 文件： | 总5页 (文件大小：619K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP030T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
The BeRex BCP030T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 300 micron gate width
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band
applications. The BCP030T is produced using state of the art metallization with SI3N4 passivation and is screened to
assure reliability.
PRODUCT FEATURES
25 dBm Typical Output Power
14 dB Typical Gain @ 12 GHz
0.25 X 300 Micron Recessed Gate
APPLICATIONS
Commercial
Military / Hi-Rel.
Test & Measurement
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C
TEST
SYMBOL
PARAMETER/TEST CONDITIONS
MIN.
TYPICAL
MAX.
UNIT
dBm
dB
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
Output Power @ P1dB (Vds = 8V, Ids = 50%
24.5
25.5
25.5
14.0
10.5
65
P1dB
Idss)
13.0
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss
)
PAE
NF
PAE @ P1dB (Vds = 8V, Ids = 50% Idss
)
%
60
50 Ohm Noise Figure (Vds=2V, Ids=15 mA
12 GHz
1.14
dB
Idss
Gm
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
60
90
120
mA
mS
V
Transconductance (Vds = 2V, Vgs = 50% Idss
)
120
-0.5
Vp
Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V)
-2.5
-1.1
BVgd
BVgs
Drain Breakdown Voltage (Ig = 0.3 mA, source open)
Source Breakdown Voltage (Ig = 0.3 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
-15.0
-13.0
-12.0
V
V
Rth
121
°C/W
www.berex.com
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2
September 2011
BCP030T
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C
TEST
FREQ.
SYMBOL
P1dB
PARAMETER/TEST CONDITIONS
MIN.
TYPICAL
MAX.
UNIT
dBm
dB
Output Power @ P1dB (Vds = 8V, Ids = 50%
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
18 GHz
22.0
23.0
23.0
15.5
11.5
45
Idss)
14.5
G1dB
Gain @ P1dB (Vds = 8V, Ids = 50% Idss
)
PAE
PAE @ P1dB (Vds = 8V, Ids = 50% Idss
)
%
45
NF
Idss
50 Ohm Noise Figure (Vds=2V, Ids=15 mA
12 GHz
1.14
90
dB
mA
mS
V
Saturated Drain Current (Vgs = 0V, Vds = 1.0V)
60
120
Gm
Transconductance (Vds = 2V, Vgs = 50% Idss
)
120
-1.1
-15
-13
121
Vp
Pinch-off Voltage (Ids = 0.3 mA, Vds = 2V)
-2.5
-0.5
-12
BVgd
BVgs
Rth
Drain Breakdown Voltage (Ig = 0.3 mA, source open)
Source Breakdown Voltage (Ig = 0.3 mA, drain open)
Thermal Resistance (Au-Sn Eutectic Attach)
V
V
°C/W
MAXIMUM RATING (Ta = 25° C)
SYMBOLS
PARAMETERS
ABSOLUTE
CONTINUOUS
Vds
Vgs
Ids
Drain-Source Voltage
Gate-Source Voltage
Drain Current
12 V
-6 V
Idss
8 V
-3 V
Idss
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
18 mA
22 dBm
175° C
3 mA
@ 3dB compression
150° C
-60° C - 150° C
1.4 W
-60° C - 150° C
1.2 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.
www.berex.com
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2
September 2011
BCP030T
PIN_POUT/GAIN, PAE (12 GHz)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
Frequency = 12GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
PIN_POUT/GAIN, PAE (18 GHz)
Frequency = 18GHz
Frequency = 18GHz
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)
Vds = 8 V, Ids = 50% Idss (Tuned for Power)
www.berex.com
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2
September 2011
BCP030T
S-PARAMETER (Vds = 8V, Ids = 50% Idss)
FREQ.
[GHZ]
1
S11
[MAG]
0.97
0.91
0.85
0.79
0.75
0.73
0.72
0.72
0.72
0.72
0.74
0.75
0.76
0.79
0.80
0.82
0.85
0.86
0.88
0.89
0.90
0.90
0.90
0.90
0.92
0.92
S11
[ANG.]
-27.72
-53.85
-78.65
-100.97
-121.90
-139.47
-155.99
-168.99
-179.97
169.20
160.38
151.34
142.18
135.08
128.26
120.51
116.46
110.04
104.87
103.82
100.91
99.40
S21
[MAG]
9.10
8.41
7.57
6.73
5.95
5.24
4.62
4.14
3.71
3.37
3.04
2.81
2.58
2.37
2.21
2.05
1.88
1.73
1.57
1.43
1.30
1.15
1.04
0.93
0.83
0.76
S21
[ANG.]
159.71
141.85
126.23
112.12
99.32
88.30
77.67
68.95
61.22
53.50
46.46
39.07
32.32
25.60
19.05
12.14
5.62
S12
[MAG]
0.019
0.036
0.048
0.055
0.061
0.062
0.062
0.063
0.060
0.060
0.060
0.059
0.059
0.059
0.060
0.061
0.060
0.064
0.065
0.066
0.069
0.068
0.067
0.066
0.068
0.064
S12
[ANG.]
74.59
61.30
50.31
41.94
35.64
30.97
24.97
21.67
19.65
18.02
16.99
13.84
14.91
12.56
12.24
10.92
8.30
S22
[MAG]
0.71
0.66
0.59
0.54
0.48
0.44
0.40
0.38
0.36
0.34
0.33
0.32
0.30
0.28
0.25
0.21
0.17
0.13
0.10
0.11
0.17
0.24
0.31
0.39
0.45
0.49
S22
[ANG.]
-10.54
-19.37
-26.23
-32.00
-37.41
-41.98
-48.43
-51.15
-54.78
-58.30
-60.45
-63.94
-65.39
-67.17
-70.97
-75.16
-84.42
-99.08
-131.69
-175.84
160.35
149.32
142.60
139.62
137.44
137.87
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
-1.49
5.45
-9.16
3.39
-14.39
-20.35
-25.89
-30.07
-34.99
-38.62
-40.47
3.64
1.83
1.36
100.87
98.38
-0.48
-1.84
-0.48
4.76
99.27
101.85
Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below.
www.berex.com
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2
September 2011
BCP030T
WIRE BONDING INFORMATION
Using 1 mil. diameter, Au bonding wires.
1. Gate to input transmission line
- Length and Height : 600 µm x 250 µm
- Number of wire(s): 1
2. Drain to output transmission line
- Length and Height : 400 µm x 250 µm
- Number of wire(s) : 1
3. Source to ground plate
- Length and Height : 250 µm x 300 µm
- Number of wire(s) : 4
DISCLAIMER
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE
EXPRESS WRITTEN APPROVAL OF BEREX.
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use
provided in labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
www.berex.com
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2
September 2011
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