BCP060T [BEREX]

HIGH EFFICIENCY pHEMT POWER FET CHIP; 高效率的pHEMT功率场效应管芯片
BCP060T
型号: BCP060T
厂家: BEREX CORPORATION    BEREX CORPORATION
描述:

HIGH EFFICIENCY pHEMT POWER FET CHIP
高效率的pHEMT功率场效应管芯片

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BCP060T  
HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)  
The BeRex BCP060T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 600 micron gate width  
making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5  
GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band  
applications. The BCP060T is produced using state of the art metallization with SI3N4 passivation and is screened to  
assure reliability.  
PRODUCT FEATURES  
28 dBm Typical Output Power  
12 dB Typical Gain @ 12 GHz  
0.25 X 600 Micron Recessed Gate  
APPLICATIONS  
Commercial  
Military / Hi-Rel.  
Test & Measurement  
ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C  
TEST  
SYMBOL  
PARAMETER/TEST CONDITIONS  
MIN.  
TYPICAL  
MAX.  
UNIT  
dBm  
dB  
FREQ.  
12 GHz  
18 GHz  
12 GHz  
18 GHz  
12 GHz  
18 GHz  
Output Power @ P1dB (Vds = 8V, Ids = 50%  
27.0  
28.0  
28.5  
12.0  
9.0  
55  
55  
P1dB  
Idss)  
11.0  
G1dB  
Gain @ P1dB (Vds = 8V, Ids = 50% Idss  
)
PAE  
PAE @ P1dB (Vds = 8V, Ids = 50% Idss  
)
%
NF  
Idss  
50 Ohm Noise Figure (Vds=2V, Idss=15 mA)  
Saturated Drain Current (Vgs = 0V, Vds = 2V)  
12 GHz  
1.34  
180  
240  
-1.1  
-15  
dB  
mA  
mS  
V
120  
-2.5  
240  
Gm  
Transconductance (Vds = 3V, Vgs = 50% Idss  
)
Vp  
Pinch-off Voltage (Ids = 0.6 mA, Vds = 2V)  
-0.5  
-12  
BVgd  
BVgs  
Drain Breakdown Voltage (Ig = 0.6 mA, source open)  
Source Breakdown Voltage (Ig = 0.6 mA, drain open)  
V
-13  
V
Rth  
Thermal Resistance (Au-Sn Eutectic Attach)  
75  
°C/W  
www.berex.com  
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595  
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2  
September 2011  
BCP060T  
ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) Ta = 25° C  
TEST  
FREQ.  
SYMBOL  
P1dB  
PARAMETER/TEST CONDITIONS  
MIN.  
TYPICAL  
MAX.  
UNIT  
dBm  
dB  
Output Power @ P1dB (Vds = 8V, Ids = 50%  
12 GHz  
18 GHz  
12 GHz  
18 GHz  
12 GHz  
18 GHz  
27.5  
27.0  
12.5  
9.5  
55  
50  
Idss)  
11.0  
G1dB  
Gain @ P1dB (Vds = 8V, Ids = 50% Idss  
)
PAE  
PAE @ P1dB (Vds = 8V, Ids = 50% Idss  
)
%
NF  
Idss  
50 Ohm Noise Figure (Vds=2V, Idss=15 mA)  
Saturated Drain Current (Vgs = 0V, Vds = 2V)  
12 GHz  
1.34  
180  
240  
-1.1  
-15  
-13  
75  
dB  
mA  
mS  
V
120  
240  
Gm  
Transconductance (Vds = 3V, Vgs = 50% Idss  
)
Vp  
Pinch-off Voltage (Ids = 0.6 mA, Vds = 2V)  
- 2.5  
- 0.5  
-12  
BVgd  
BVgs  
Rth  
Drain Breakdown Voltage (Ig = 0.6 mA, source open)  
Source Breakdown Voltage (Ig = 0.6 mA, drain open)  
Thermal Resistance (Au-Sn Eutectic Attach)  
V
V
°C/W  
MAXIMUM RATING (Ta = 25° C)  
SYMBOLS  
PARAMETERS  
ABSOLUTE  
CONTINUOUS  
Vds  
Vgs  
Ids  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
12 V  
-6 V  
Idss  
8 V  
-3 V  
Idss  
Igsf  
Pin  
Tch  
Tstg  
Pt  
Forward Gate Current  
Input Power  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
30 mA  
25 dBm  
175° C  
10 mA  
@3dB Compression  
150° C  
-60° C - 150° C  
2.6 W  
-60° C - 150° C  
2.2 W  
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.  
www.berex.com  
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595  
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2  
September 2011  
BCP060T  
PIN_POUT/Gain, PAE (12 GHz)  
Frequency = 12GHz  
Vds= 8 V, Ids = 50% Idss (Tuned for Power)  
Frequency = 12GHz  
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)  
PIN_POUT/Gain, PAE (18 GHz)  
Frequency = 18GHz  
Frequency = 18GHz  
Vds = 8 V, Ids = 50% Idss (Tuned for Power)  
Vds = 8 V, Ids = 50% Idss (Tuned for Gain)  
www.berex.com  
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595  
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2  
September 2011  
BCP060T  
S-PARAMETER (Vds = 8V, Ids = 50% Idss)  
FREQ.  
[GHZ]  
1
S11  
[MAG]  
0.92  
0.83  
0.79  
0.77  
0.77  
0.77  
0.78  
0.79  
0.80  
0.81  
0.82  
0.83  
0.85  
0.86  
0.88  
0.89  
0.90  
0.91  
0.92  
0.92  
0.93  
0.93  
0.92  
0.92  
0.94  
0.93  
S11  
[ANG.]  
-57.91  
-100.13  
-129.58  
-150.61  
-165.65  
-178.11  
172.13  
163.81  
156.81  
150.09  
143.11  
136.61  
130.15  
123.54  
117.87  
112.39  
106.79  
103.05  
100.04  
97.13  
S21  
[MAG]  
13.83  
10.45  
7.98  
6.32  
5.18  
4.35  
3.69  
3.25  
2.88  
2.58  
2.34  
2.12  
1.94  
1.77  
1.60  
1.45  
1.29  
1.13  
1.00  
0.88  
0.76  
0.66  
0.57  
0.51  
0.46  
0.41  
S21  
[ANG.]  
142.64  
117.12  
99.76  
86.33  
75.24  
65.56  
56.72  
48.59  
41.33  
34.01  
26.33  
18.59  
11.44  
3.60  
S12  
[MAG]  
0.017  
0.032  
0.047  
0.061  
0.073  
0.084  
0.094  
0.103  
0.108  
0.114  
0.120  
0.124  
0.130  
0.134  
0.139  
0.144  
0.148  
0.153  
0.155  
0.156  
0.150  
0.149  
0.147  
0.145  
0.144  
0.145  
S12  
[ANG.]  
62.75  
43.42  
34.74  
28.79  
27.32  
26.36  
25.99  
25.03  
23.59  
24.54  
23.14  
22.92  
19.85  
16.06  
14.39  
10.53  
7.58  
S22  
[MAG]  
0.45  
0.34  
0.25  
0.19  
0.15  
0.13  
0.12  
0.12  
0.12  
0.14  
0.16  
0.19  
0.22  
0.25  
0.30  
0.35  
0.41  
0.46  
0.51  
0.57  
0.61  
0.65  
0.68  
0.71  
0.74  
0.76  
S22  
[ANG.]  
-30.63  
-49.55  
-62.90  
-72.26  
-86.36  
-101.81  
-123.94  
-137.66  
-155.22  
-169.25  
178.07  
168.01  
157.74  
148.31  
140.13  
132.31  
126.29  
120.85  
115.68  
111.97  
109.56  
107.33  
106.11  
106.08  
105.60  
106.41  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
-4.01  
-11.27  
-19.37  
-26.14  
-32.93  
-38.54  
-43.13  
-46.19  
-49.34  
-51.56  
-53.03  
-54.01  
6.07  
3.45  
0.94  
96.22  
0.17  
96.46  
0.71  
96.55  
-0.34  
-0.02  
2.76  
97.66  
98.95  
99.53  
3.92  
Note: S-parameters include bond wires. Reference planes are at edge of substrates shown on “Wire Bonding Information” figure below.  
www.berex.com  
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595  
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2  
September 2011  
BCP060T  
Wire Bonding Information  
Using 1 mil. diameter, Au bonding wires.  
1. Gate to input transmission line  
- Length and Height : 600 µm x 250 µm  
- Number of wire(s): 1  
2. Drain to output transmission line  
- Length and Height : 400 µm x 250 µm  
- Number of wire(s) : 1  
3. Source to ground plate  
- Length and Height : 250 µm x 300 µm  
- Number of wire(s) : 4  
DISCLAIMER  
BEREX RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN. BEREX DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF  
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.  
LIFE SUPPORT POLICY  
BEREX PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF BEREX.  
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b)  
support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use  
provided in labeling, can be reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.  
www.berex.com  
BeRex, Inc. 1735 North 1st Street #302 San Jose, CA 95112 tel. (408) 452-5595  
Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2  
September 2011  

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